Samsung electronics co., ltd. (20240381623). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381623 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract includes various layers and patterns to facilitate its operation.
- The device consists of a substrate, a bit line, interlayer insulating layers, a channel trench, a channel pattern, a word line, a gate insulating pattern, an insulating pattern, and a landing pad.
- The landing pad is connected to the channel pattern and includes two protrusions for enhanced functionality.
- The first protrusion is located between the channel pattern and the second interlayer insulating layer, while the second protrusion is positioned between the channel pattern and the insulating pattern.
Potential Applications: - This semiconductor device can be used in memory storage applications, such as in dynamic random-access memory (DRAM) or flash memory. - It can also be utilized in logic circuits for various electronic devices.
Problems Solved: - The device addresses the need for efficient data storage and retrieval in electronic systems. - It provides a compact and reliable solution for semiconductor memory applications.
Benefits: - Improved data storage capacity and speed. - Enhanced reliability and durability of electronic devices. - Cost-effective manufacturing process for semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be commercialized by semiconductor manufacturers for producing high-performance memory devices used in consumer electronics, computers, and other digital devices. The market implications include increased demand for faster and more efficient memory solutions in various industries.
Questions about the technology: 1. How does the landing pad design improve the functionality of the semiconductor device? 2. What are the specific advantages of using this semiconductor device in memory storage applications?
Original Abstract Submitted
a semiconductor device includes a substrate; a bit line disposed on the substrate and extending in a first direction; a first interlayer insulating layer disposed on the bit line, and including a channel trench extending in a second direction crossing the first direction; a second interlayer insulating layer disposed on the first interlayer insulating layer; a channel pattern disposed in the channel trench; a word line extending in the second direction and spaced apart from the channel pattern; a gate insulating pattern disposed between the channel pattern and the word line; an insulating pattern disposed on the word line; and a landing pad connected to the channel pattern. the landing pad includes a first protrusion disposed between the channel pattern and the second interlayer insulating layer, and a second protrusion disposed between the channel pattern and the insulating pattern.
