Samsung electronics co., ltd. (20240381618). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Myeongdong Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381618 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes various structures such as contact structures, bit line structures, spacer structures, and a capacitor.
- The device features a first contact structure on the central portion of the active pattern.
- A bit line structure is located on the first contact structure.
- Spacer structures on the sidewalls of the bit line structure and the first contact structure consist of multiple stacked spacers.
- A second contact structure is positioned on an end portion of the active pattern.
- A capacitor is situated on the second contact structure.
Potential Applications: - This technology can be applied in the semiconductor industry for memory devices and integrated circuits.
Problems Solved: - This innovation addresses the need for efficient and compact semiconductor devices with improved performance.
Benefits: - Enhanced functionality and performance of semiconductor devices. - Increased efficiency and miniaturization of electronic components.
Commercial Applications: - The technology can be utilized in the production of advanced memory devices and microprocessors, catering to the growing demand for high-performance electronics.
Questions about the Technology: 1. How does the positioning of the spacer structures contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of having a capacitor on the second contact structure in this configuration?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology and manufacturing processes to enhance the performance and efficiency of devices utilizing this innovation.
Original Abstract Submitted
a semiconductor device includes a first contact structure on a central portion of the active pattern, a bit line structure on the first contact structure, a spacer structure on sidewalls of the bit line structure and the first contact structure and including a first spacer, a second spacer, an etch stop pattern and a third spacer sequentially stacked in a horizontal direction substantially parallel to an upper surface of the substrate, a second contact structure on an end portion of the active pattern, and a capacitor on the second contact structure. a lowermost surface of the first spacer may be lower than a lowermost surface of the second spacer, and lower surfaces of the etch stop pattern and the third spacer may be higher than the lowermost surface of the second spacer.
