Samsung electronics co., ltd. (20240381616). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seongkeun Cho of Suwon-si (KR)

Suhwan Hwang of Suwon-si (KR)

Kanguk Kim of Suwon-si (KR)

Yihwan Kim of Suwon-si (KR)

Jihoon Kim of Suwon-si (KR)

Jinhyung Park of Suwon-si (KR)

Hyunsu Shin of Suwon-si (KR)

Taemin Earmme of Suwon-si (KR)

Sungwook Jung of Suwon-si (KR)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381616 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

The method described in the patent application involves several steps in the fabrication process of electronic devices:

• Forming a first gate structure on a substrate
• Creating a bit line structure on the first gate structure
• Depositing a preliminary contact plug layer with amorphous silicon
• Adding a reflective layer structure on top of the preliminary contact plug layer
• Transforming the amorphous silicon into polysilicon through a melting laser annealing process
• Forming a capacitor on the contact plug layer

Key Features and Innovation: - Use of a reflective layer structure with different refractive indices for improved performance - Implementation of a melting laser annealing process to convert amorphous silicon into polysilicon - Sequential formation of gate, bit line, contact plug, and capacitor structures for integrated circuits

Potential Applications: - Semiconductor manufacturing - Memory devices - Microprocessor fabrication

Problems Solved: - Enhancing the conductivity and performance of contact plug layers - Improving the efficiency of electronic devices through optimized fabrication processes

Benefits: - Increased speed and reliability of electronic devices - Higher integration density on semiconductor chips - Enhanced overall performance of integrated circuits

Commercial Applications: Title: Advanced Semiconductor Fabrication Process for Enhanced Device Performance Description: This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and product quality.

Prior Art: Readers can explore prior research on semiconductor fabrication processes, reflective layer structures, and laser annealing techniques in the field of microelectronics.

Frequently Updated Research: Researchers are constantly exploring new materials and methods to further enhance the performance and efficiency of electronic devices. Stay updated on the latest advancements in semiconductor technology for potential future improvements.

Questions about Advanced Semiconductor Fabrication Process: 1. How does the melting laser annealing process improve the properties of the contact plug layer? 2. What are the potential challenges in implementing the reflective layer structure with varying refractive indices?

Original Abstract Submitted

a method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. the reflective layer structure may include first and second reflective layers. a refractive index of the second reflective layer may be being greater than that of the first reflective layer. portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. the forming the contact plug layer may include performing a melting laser annealing (mla) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.