Samsung electronics co., ltd. (20240379780). 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERTICALLY ISOLATED FROM EACH OTHER BY STRENGTHENED ISOLATION STRUCTURE simplified abstract
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERTICALLY ISOLATED FROM EACH OTHER BY STRENGTHENED ISOLATION STRUCTURE
Organization Name
Inventor(s)
Keumseok Park of Slingerlands NY (US)
Kang-ill Seo of Springfield VA (US)
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERTICALLY ISOLATED FROM EACH OTHER BY STRENGTHENED ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379780 titled '3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERTICALLY ISOLATED FROM EACH OTHER BY STRENGTHENED ISOLATION STRUCTURE
The semiconductor device described in the abstract includes a unique structure with multiple source/drain regions and channel structures, as well as isolation layers and a blocking structure.
- The device has a 1source/drain region connected to a 1channel structure, and a 2source/drain region above the 1source/drain region connected to a 2channel structure above the 1channel structure.
- There is a channel isolation layer between the 1channel structure and the 2channel structure, and a source/drain isolation layer between the 1source/drain region and the 2source/drain region.
- A blocking structure is located between the channel isolation layer and the source/drain isolation layer, with its entire width in a channel-length direction vertically below a lateral edge portion of the 2source/drain region.
Potential Applications: - This semiconductor device could be used in advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in the automotive industry for use in sensors and control systems. - The device could also be utilized in medical equipment for improved performance and efficiency.
Problems Solved: - The device addresses the need for improved performance and efficiency in semiconductor technology. - It provides a solution for enhancing the functionality of electronic devices with its unique structure. - The blocking structure helps in reducing leakage current and improving overall device performance.
Benefits: - Enhanced performance and efficiency in electronic devices. - Improved reliability and durability of semiconductor components. - Potential cost savings due to increased efficiency and reduced power consumption.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Performance This technology could be commercialized in the consumer electronics industry for the development of high-performance devices with improved functionality. It could also be of interest to semiconductor manufacturers looking to enhance their product offerings and stay competitive in the market.
Questions about the Advanced Semiconductor Device: 1. How does the unique structure of the device contribute to its performance improvements? 2. What specific advantages does the blocking structure provide in terms of device efficiency and reliability?
Frequently Updated Research: Researchers are continually exploring new materials and designs to further enhance the performance of semiconductor devices. Stay updated on the latest advancements in semiconductor technology to understand the evolving landscape of this field.
Original Abstract Submitted
provided is a semiconductor device whch includes: a 1source/drain region connected to a 1channel structure; a 2source/drain region, above the 1source/drain region, connected to a 2channel structure above the 1channel structure; a channel isolation layer between the 1channel structure and the 2channel structure; a source/drain isolation layer between the 1source/drain region and the 2source/drain region; and a blocking structure between the channel isolation layer and the source/drain isolation layer, wherein an entire width of the blocking structure in a channel-length direction is verically below a lateral edge portion of the 2source/drain region.
