Samsung electronics co., ltd. (20240379722). SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379722 titled 'SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SAME
The semiconductor device described in the abstract includes a unique structure with a bent-shaped first region, first and second source-drain regions, and a third source-drain region forming channel regions.
- The device features a gate electrode and a first region that extends in two directions, forming a bent shape.
- A first source-drain region extends from one end of the first region, while a second source-drain region extends from the opposite end.
- A third source-drain region is located where virtual straight lines from the first and second source-drain regions intersect in the first region.
- The third source-drain region acts as a channel region with the first source-drain region and as another channel region with the second source-drain region.
Potential Applications: - This semiconductor device could be used in advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in power management systems, sensors, and communication devices.
Problems Solved: - The unique structure of the device allows for improved performance and efficiency in electronic applications. - The design helps in reducing power consumption and enhancing overall device functionality.
Benefits: - Enhanced performance and efficiency in electronic devices. - Reduced power consumption leading to energy savings. - Improved functionality and reliability in various applications.
Commercial Applications: Title: Innovative Semiconductor Device for Enhanced Electronic Performance This technology could be utilized in the production of high-performance electronic devices, leading to increased market competitiveness and consumer demand.
Questions about the Innovative Semiconductor Device: 1. How does the unique structure of the semiconductor device contribute to its performance? - The bent-shaped first region and the arrangement of the source-drain regions create efficient channel regions, improving device functionality.
2. What potential impact could this technology have on the semiconductor industry? - This technology could lead to the development of more advanced and energy-efficient electronic devices, driving innovation in the semiconductor industry.
Original Abstract Submitted
a semiconductor device, including a gate electrode, a first region under the gate electrode and extending from a first direction to a second direction crossing the first direction, the first region having a bent shape, a first source-drain region extending from one end of the first region, a second source-drain region extending from an opposite end of the first region, and a third source-drain region at a point where a first virtual straight line extending from the first source-drain region in the first direction and a second virtual straight line extending from the second source-drain region in a direction opposite to the second direction cross each other in the first region, wherein the third source-drain region forms a first channel region together with the first source-drain region and forms a second channel region together with the second source-drain region.
