Samsung electronics co., ltd. (20240379717). IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract
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IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
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IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379717 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
The abstract describes an image sensor with a first chip and a second chip stacked on top of each other, connected by a bonding portion. The first chip contains a semiconductor substrate with a photoelectric conversion region and a circuit interconnection layer. The second chip includes a semiconductor substrate with a circuit interconnection layer.
- The image sensor consists of two stacked chips connected by a bonding portion.
- The first chip has a semiconductor substrate with a photoelectric conversion region and a circuit interconnection layer.
- The second chip includes a semiconductor substrate with a circuit interconnection layer.
- A bonding layer connects the circuit interconnection layers of the two chips.
- A diffusion barrier layer inhibits the diffusion of hydrogen or deuterium between the chips.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Improved image sensor performance - Enhanced connectivity between chips - Reduced diffusion of harmful elements
Benefits: - Higher quality image capture - Increased reliability - Enhanced functionality
Commercial Applications: Title: Advanced Image Sensor Technology for Enhanced Imaging Devices This technology can be used in various commercial applications such as digital cameras, surveillance systems, and medical imaging devices. The improved performance and connectivity of the image sensor can lead to higher quality images, increased reliability, and enhanced functionality in these devices.
Prior Art: Readers can explore prior art related to image sensor technology, semiconductor bonding techniques, and diffusion barrier layers in semiconductor devices to gain a deeper understanding of the innovation described in the abstract.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to improve image sensor performance, connectivity, and reliability. Stay updated on the latest advancements in semiconductor technology and image sensor design to leverage the full potential of this innovation.
Questions about Image Sensor Technology: 1. How does the bonding portion enhance the performance of the image sensor? The bonding portion connects the two chips, allowing for improved connectivity and data transfer between them, ultimately enhancing the overall performance of the image sensor.
2. What are the potential challenges in implementing diffusion barrier layers in semiconductor devices? Diffusion barrier layers play a crucial role in inhibiting the diffusion of harmful elements between semiconductor components. However, challenges may arise in optimizing the barrier layer thickness and material composition to effectively prevent diffusion while maintaining device performance.
Original Abstract Submitted
an image sensor includes a first chip; a second chip stacked on the first chip; and a bonding portion provided between the first chip and the second chip, wherein the first chip includes: a first semiconductor substrate including a first surface and a second surface opposing the first surface; a photoelectric conversion region in the first semiconductor substrate; and a first circuit interconnection layer provided on the first surface and adjacent to the photoelectric conversion region, wherein the second chip includes: a second semiconductor substrate including a third surface and a fourth surface facing the first surface and opposing the third surface; and a second circuit interconnection layer provided on the fourth surface, and wherein the bonding portion includes: a bonding layer provided between the first circuit interconnection layer and the second circuit interconnection layer and configured to connect the first chip and the second chip; and a diffusion barrier layer provided between the second circuit interconnection layer and the bonding layer and configured to inhibit diffusion of at least one of hydrogen or deuterium.
