Samsung electronics co., ltd. (20240379426). METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract
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METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379426 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation: The method described in the patent application involves the fabrication of a semiconductor device using an etch stop film to improve element performance and reliability. This process includes forming a homogenous etch stop film, an interlayer insulating film, and a hard mask pattern on a substrate. Trenches are then created in the interlayer insulating film, exposing the etch stop film at the bottom of the trench. Wet etching processes are used to remove portions of the etch stop film, allowing for the exposure of the lower wiring pattern.
- Sequential formation of an etch stop film, interlayer insulating film, and hard mask pattern on a substrate
- Creation of trenches in the interlayer insulating film to expose the etch stop film
- Removal of portions of the etch stop film using wet etching processes
- Improvement of element performance and reliability in semiconductor devices
- Enhanced fabrication process for semiconductor devices
Potential Applications: This technology can be applied in the manufacturing of various semiconductor devices, including integrated circuits, microprocessors, and memory chips. It can also be used in the production of sensors, LEDs, and other electronic components that require precise etching processes.
Problems Solved: The method addresses issues related to element performance and reliability in semiconductor devices. By using a homogenous etch stop film and precise wet etching processes, the technology ensures improved functionality and durability of the devices.
Benefits: - Enhanced element performance in semiconductor devices - Increased reliability and longevity of the devices - Improved manufacturing process efficiency - Consistent and precise etching results
Commercial Applications: The technology has significant commercial implications in the semiconductor industry, particularly in the production of advanced electronic components. It can lead to the development of more reliable and high-performance devices, ultimately impacting sectors such as telecommunications, computing, and consumer electronics.
Questions about Semiconductor Device Fabrication: 1. How does the use of an etch stop film contribute to improving element performance in semiconductor devices? 2. What are the potential applications of this fabrication method in the electronics industry?
Frequently Updated Research: Researchers are continually exploring new materials and processes to further enhance the performance and reliability of semiconductor devices. Stay updated on the latest advancements in etch stop film technology and wet etching techniques for semiconductor fabrication.
Original Abstract Submitted
a method of manufacturing a semiconductor device capable of improving element performance and reliability uses an etch stop film formed as a homogenous film. the method for fabricating a semiconductor device comprises sequentially forming an etch stop film, an interlayer insulating film, and a hard mask pattern on a substrate. a trench is formed in the interlayer insulating film using the hard mask pattern that exposes a surface of a portion of the etch stop film at a bottom of the trench. at the bottom of the trench, the hard mask pattern and a first portion of the etch stop film are removed by using a first wet etching process. a remaining portion of the etch stop film at the bottom of the trench is removed to expose the lower wiring pattern by using a second wet etching process.
