Samsung electronics co., ltd. (20240379409). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Donghoon Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379409 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the patent application consists of a substrate with an active pattern defined by a trench, a device isolation layer within the trench, first and second source/drain patterns on the active pattern, a partition wall between the source/drain patterns, a dam structure, a gate cutting pattern on the device isolation layer, and a gate spacer on the side surface of the gate cutting pattern. The first source/drain pattern is located in a recess between the partition wall and the dam structure, with a lower portion of the gate spacer positioned between the dam structure and the gate cutting pattern. The lower portion of the gate spacer has a different thickness from the upper portion of the gate spacer.
- The semiconductor device includes a unique structure with a partition wall separating the source/drain patterns.
- The gate spacer has different thicknesses in the lower and upper portions.
- The first source/drain pattern is recessed between the partition wall and the dam structure.
- The dam structure and gate cutting pattern are essential components of the device.
- The device isolation layer plays a crucial role in the functionality of the semiconductor device.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It may find use in the development of high-performance electronic devices.
Problems Solved: - Provides improved isolation and functionality in semiconductor devices. - Enhances the performance and efficiency of electronic components.
Benefits: - Increased efficiency and performance in semiconductor devices. - Enhanced functionality and isolation capabilities. - Potential for the development of advanced electronic products.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices, catering to industries such as telecommunications, computing, and consumer electronics. The innovation offers improved performance and functionality, making it a valuable asset in the competitive market.
Questions about Semiconductor Device Technology: 1. How does the unique structure of the gate spacer contribute to the overall functionality of the semiconductor device? 2. What are the specific advantages of having a partition wall between the source/drain patterns in this semiconductor device?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to ensure you are leveraging the most innovative solutions for your electronic products.
Original Abstract Submitted
a semiconductor device includes a substrate including an active pattern that is defined by a trench, a device isolation layer in the trench, a first source/drain pattern and a second source/drain pattern on the active pattern, a partition wall between the first and second source/drain patterns, a dam structure and a gate cutting pattern on the device isolation layer, and a gate spacer on a side surface of the gate cutting pattern. the first source/drain pattern is in a recess between the partition wall and the dam structure, and a lower portion of the gate spacer is interposed between the dam structure and the gate cutting pattern. a first thickness of the lower portion of the gate spacer is different from a second thickness of an upper portion of the gate spacer.
