Samsung electronics co., ltd. (20240379162). NON-VOLATILE MEMORY DEVICES INCLUDING TWISTED BLOCK SELECT LINES simplified abstract
Contents
NON-VOLATILE MEMORY DEVICES INCLUDING TWISTED BLOCK SELECT LINES
Organization Name
Inventor(s)
Seokhyeon Chae of Suwon-si (KR)
Hyunkook Park of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICES INCLUDING TWISTED BLOCK SELECT LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379162 titled 'NON-VOLATILE MEMORY DEVICES INCLUDING TWISTED BLOCK SELECT LINES
Simplified Explanation: The patent application describes a non-volatile memory device with a unique block select line configuration.
- Memory cell array
- Pass transistor circuit connected to the memory cell array
- Block select line group with multiple block select lines, including twist patterns
- First metal line with at least one block select line passing through a hole
Key Features and Innovation:
- Non-volatile memory device design
- Block select line group with twist patterns
- Improved path configuration for block select lines
Potential Applications:
- Data storage devices
- Embedded systems
- Consumer electronics
Problems Solved:
- Efficient data storage
- Enhanced memory cell array connectivity
- Improved performance of non-volatile memory devices
Benefits:
- Higher data storage capacity
- Faster data access speeds
- Enhanced reliability of memory devices
Commercial Applications:
- Data centers
- Mobile devices
- IoT devices
Questions about Non-Volatile Memory Devices: 1. How do twist patterns in block select lines improve memory device performance? 2. What are the key advantages of using a pass transistor circuit in memory devices?
Frequently Updated Research: Research on advanced memory device architectures and materials could further enhance the performance of non-volatile memory devices.
By optimizing the design of block select lines and incorporating twist patterns, the patent application aims to improve the efficiency and reliability of non-volatile memory devices.
Original Abstract Submitted
according to some embodiments of the inventive concept, there is provided a non-volatile memory device comprising: a memory cell array; a pass transistor circuit electrically connected to the memory cell array; a block select line group including a plurality of block select lines, wherein the plurality of block select lines comprises a first block select line and a second block select line, each of which extends in a first direction on a first layer, and the block select line group is electrically connected to the pass transistor circuit; and a first metal line extending in a second direction on a second layer, wherein the second layer is on the first layer, wherein at least one block select line includes at least one twist pattern that changes a path of the at least one block select line in a hole of the first metal line.
