Samsung electronics co., ltd. (20240379151). BIT LINE SENSE AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
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BIT LINE SENSE AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME
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BIT LINE SENSE AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379151 titled 'BIT LINE SENSE AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME
The abstract describes a bit line sense amplifier that includes inverters, offset elements, and memory cell connections to bit lines for offset cancellation.
- The bit line sense amplifier consists of a first inverter connected to a complementary sensing bit line and a second inverter connected to a sensing bit line.
- Offset elements are used to connect the bit line to the complementary sensing bit line and the complementary bit line to the sensing bit line in response to an offset cancellation signal.
- During the first time interval, the offset elements are turned off, and a capacitor of a first memory cell is connected to the bit line.
- In the second time interval after the first, the offset elements are turned on, and the capacitor of the first memory cell is disconnected from the bit line.
Potential Applications: - Memory cell technology - Semiconductor industry - Integrated circuit design
Problems Solved: - Offset cancellation in bit line sense amplifiers - Efficient memory cell operation - Improved signal processing in semiconductor devices
Benefits: - Enhanced performance of memory cells - Increased efficiency in signal processing - Reduction of offset errors in bit line sensing
Commercial Applications: Title: Advanced Memory Cell Technology for Semiconductor Devices This technology can be applied in various commercial sectors such as: - Consumer electronics - Data storage devices - Communication systems
Questions about the technology: 1. How does the offset cancellation signal improve the performance of the bit line sense amplifier? 2. What are the key advantages of using offset elements in memory cell connections?
Original Abstract Submitted
a bit line sense amplifier includes a first inverter having an output terminal connected to a complementary sensing bit line, a second inverter having an output terminal connected to a sensing bit line, a first offset element connecting a bit line to the complementary sensing bit line and a second offset element connecting a complementary bit line to the sensing bit line, in response to an offset cancellation signal. during a first time interval, the first offset element and the second offset element are turned off and a capacitor of a first memory cell is connected to the bit line. during a second time interval after the first time interval, the first offset element and the second offset element are turned on and the capacitor of the first memory cell is disconnected from the bit line.
