Samsung electronics co., ltd. (20240357831). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyun-Mook Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357831 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation:
This patent application describes a semiconductor device with stacked semiconductor patterns on a substrate, a gate electrode with horizontal and vertical portions, a gate dielectric layer, and a ferroelectric layer.
Key Features and Innovation:
- Stacked semiconductor patterns on a substrate
- Gate electrode with horizontal and vertical portions
- Gate dielectric layer and ferroelectric layer
- Impurity regions and channel region in semiconductor patterns
Potential Applications:
This technology could be used in advanced semiconductor devices, memory storage, and integrated circuits.
Problems Solved:
This technology addresses the need for improved performance and efficiency in semiconductor devices.
Benefits:
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in semiconductor devices.
Commercial Applications:
Potential commercial applications include consumer electronics, telecommunications, and automotive electronics industries.
Questions about Semiconductor Devices: 1. What are the key components of a semiconductor device? 2. How does the ferroelectric layer contribute to the performance of the device?
2. Another relevant generic question, with a detailed answer. 2. How does the gate dielectric layer impact the operation of the semiconductor device?
Original Abstract Submitted
a semiconductor device may include a substrate; semiconductor patterns that are stacked on the substrate, extend in a first direction parallel to a top surface of the substrate, and are spaced apart from each other; a gate electrode including horizontal portions, that extend in a second direction crossing the first direction, and a vertical portion, that is in contact with the horizontal portions and extends in a third direction perpendicular to the top surface of the substrate; a gate dielectric layer between the semiconductor patterns and the gate electrode; and a ferroelectric layer between the gate dielectric layer and the gate electrode. each of the semiconductor patterns may include impurity regions and a channel region between the impurity regions, the vertical portion may be on a first side surface of the channel region, and the horizontal portions may be on a top and bottom surface of the channel region.
