Samsung electronics co., ltd. (20240357825). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM simplified abstract
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357825 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM
The semiconductor device described in the abstract includes various structures such as a lower structure, a stack structure, memory vertical structure, dummy vertical structures, and contact plugs.
- The lower structure contains a peripheral circuit, lower insulating structure, and a pattern structure.
- The stack structure consists of interlayer insulating layers and horizontal layers, including gate horizontal layers and first insulating horizontal layers.
- The memory vertical structure penetrates the gate horizontal layers, while the dummy vertical structures also penetrate them.
- A first peripheral contact plug extends into the first insulating region, and gate contact plugs are located on gate pads of the gate horizontal layers.
- The memory vertical structure and dummy vertical structures are in contact with the pattern structure, with the dummy structures extending further into it than the memory structure.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices with improved performance and functionality. - It can be applied in various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved: - Enhances the integration and functionality of semiconductor devices. - Improves the efficiency and reliability of memory structures within the device.
Benefits: - Increased performance and functionality of semiconductor devices. - Enhanced memory capabilities and overall device reliability.
Commercial Applications: - This technology has significant commercial potential in the semiconductor industry, leading to the development of more advanced and efficient electronic devices.
Questions about the technology: 1. How does this semiconductor device improve memory integration compared to traditional devices? 2. What are the potential market implications of implementing this technology in electronic devices?
Original Abstract Submitted
a semiconductor device includes a lower structure including a peripheral circuit, a lower insulating structure covering the peripheral circuit, and a pattern structure on the lower insulating structure; a stack structure including interlayer insulating layers and horizontal layers alternately stacked on the lower structure, wherein the horizontal layers include gate horizontal layers in a gate region of the stack structure and first insulating horizontal layers in a first insulating region of the stack structure; a memory vertical structure including a portion penetrating the gate horizontal layers; dummy vertical structures including a portion penetrating the gate horizontal layers; a first peripheral contact plug including a portion penetrating the first insulating region; and gate contact plugs on gate pads of the gate horizontal layers, wherein upper surface of the gate contact plugs and the first peripheral contact plugs are coplanar with each other, wherein the memory vertical structure and the dummy vertical structure are contacting the pattern structure, and wherein at least one of the dummy vertical structures extend further into the pattern structure than the memory vertical structure in a downward direction.
