Samsung electronics co., ltd. (20240357824). SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dong Sung Choi of Suwon-si (KR)
Chang Heon Cheon of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357824 titled 'SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation: The semiconductor memory device described in the patent application features a unique structure that enhances reliability and performance.
- The device includes a cell substrate, a mold stack with alternating mold insulating layers and gate electrodes, a semiconductor layer crossing the cell substrate, a blocking insulating pattern, a charge storage layer with a charge trap portion, a first charge blocking portion, and a tunnel insulating layer.
- The oxygen concentration in the first charge blocking portion is higher than that in the charge trap portion, improving the device's overall functionality and reliability.
Key Features and Innovation:
- Unique structure with mold stack and semiconductor layer.
- Higher oxygen concentration in the first charge blocking portion.
- Enhanced reliability and performance of the semiconductor memory device.
Potential Applications:
- Memory storage devices.
- Electronic devices requiring reliable and high-performance memory components.
Problems Solved:
- Improved reliability in semiconductor memory devices.
- Enhanced performance and functionality.
Benefits:
- Increased reliability.
- Improved performance.
- Enhanced functionality.
Commercial Applications: Potential commercial applications include:
- Consumer electronics.
- Data storage devices.
- Industrial automation systems.
Prior Art: Further research can be conducted in the field of semiconductor memory devices to explore similar structures and technologies.
Frequently Updated Research: Stay updated on advancements in semiconductor memory technology to leverage the latest innovations in the field.
Questions about Semiconductor Memory Devices: 1. What are the key components of a semiconductor memory device? 2. How does the oxygen concentration in the charge blocking portion affect the device's performance and reliability?
Original Abstract Submitted
there is provided a semiconductor memory device having improved reliability. the semiconductor memory device includes a cell substrate, a mold stack including mold insulating layers and gate electrodes, which are alternately stacked on the cell substrate, a semiconductor layer extended in a vertical direction crossing an upper surface of the cell substrate to pass through the mold stack, a blocking insulating pattern between the semiconductor layer and each of the gate electrodes, a charge storage layer including a charge trap portion between the semiconductor layer and the blocking insulating pattern and a first charge blocking portion between the semiconductor layer and each of the mold insulating layers, and a tunnel insulating layer between the semiconductor layer and the charge storage layer, wherein an oxygen concentration of the first charge blocking portion is higher than that of the charge trap portion.
