Samsung electronics co., ltd. (20240357806). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEONKYUNG Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357806 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The present disclosure pertains to a semiconductor device and an electronic system that incorporates it. The semiconductor device, in one embodiment, comprises:
- First substrate
- Wire portion on the first substrate with a wire layer and an insulation layer
- Second substrate on the wire portion
- First gate stacking structure with an interlayer insulating layer and a gate electrode
- Second gate stacking structure with an interlayer insulating layer and a gate electrode
- Channel structure passing through the gate stacking structures and connected to the second substrate
- Second substrate with a first material layer and a second material layer, both containing polysilicon
- Insulation layer between the wire layer and the second substrate
Key Features and Innovation: - Dual gate stacking structures for enhanced performance - Polysilicon layers with different materials for specific functions - Channel structure connecting gate stacking structures for efficient operation
Potential Applications: - Advanced semiconductor devices - High-performance electronic systems - Integrated circuits for various applications
Problems Solved: - Improved conductivity and efficiency in semiconductor devices - Enhanced functionality and reliability in electronic systems
Benefits: - Increased performance and speed - Greater reliability and durability - Enhanced functionality for diverse applications
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in: - Consumer electronics - Telecommunications - Automotive industry - Aerospace applications
Prior Art: Further research can be conducted in the field of semiconductor devices, gate stacking structures, and material science to explore related prior art.
Frequently Updated Research: Stay updated on advancements in semiconductor technology, gate structures, and material innovations for potential improvements in this technology.
Questions about Semiconductor Devices: 1. How does the dual gate stacking structure improve the performance of the semiconductor device? 2. What are the specific advantages of using different materials in the polysilicon layers for the device's functionality?
Original Abstract Submitted
the present disclosure relates to a semiconductor device and an electronic system including the same, and the semiconductor device according to an embodiment includes: a first substrate; a wire portion disposed on the first substrate and including a wire layer and an insulation layer covering the wire layer; a second substrate disposed on the wire portion; a first gate stacking structure including an interlayer insulating layer and a gate electrode alternately stacked on the second substrate; a second gate stacking structure including an interlayer insulating layer and a gate electrode alternately stacked on the first gate stacking structure; and a channel structure passing through the first gate stacking structure and the second gate stacking structure and connected to the second substrate, wherein the second substrate includes a first material layer and a second material layer disposed on the first material layer, the first material layer includes polysilicon including a first material, the second material layer includes polysilicon including a second material that is different from the first material, and the insulation layer is disposed between the wire layer and the second substrate, and a first side of the first material layer contacts the insulation layer.
