Samsung electronics co., ltd. (20240357795). SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Sang Jae Park of Suwon-si (KR)
Myeong-Dong Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357795 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME
Simplified Explanation: The semiconductor memory device described in the patent application includes a substrate, base insulating film, conductive patterns, spacer structures, barrier metal film, filling metal film, and capacitor structure.
- The device has a substrate as its base.
- A base insulating film is present on the upper surface of the substrate.
- Multiple first conductive patterns are on the base insulating film, extending in a specific direction.
- Spacer structures are on the side surfaces of the conductive patterns.
- A barrier metal film is on the spacer structures, electrically connected to the substrate.
- A filling metal film fills the space between adjacent conductive patterns.
- A capacitor structure is on the filling metal film, electrically connected to it.
Key Features and Innovation:
- Integration of multiple conductive patterns on a base insulating film.
- Use of spacer structures and barrier metal film for electrical connection.
- Filling metal film to fill spaces between conductive patterns.
- Capacitor structure for additional functionality.
Potential Applications:
- Memory devices in electronic products.
- Data storage in computers and smartphones.
- Integrated circuits for various electronic systems.
Problems Solved:
- Efficient use of space on the substrate.
- Improved electrical connectivity between components.
- Enhanced functionality of the semiconductor memory device.
Benefits:
- Increased memory capacity.
- Enhanced performance of electronic devices.
- Compact design for space-saving.
Commercial Applications: The semiconductor memory device can be utilized in various electronic products such as smartphones, computers, tablets, and other devices requiring data storage and memory capabilities.
Questions about Semiconductor Memory Device: 1. How does the barrier metal film contribute to the electrical connectivity in the device? 2. What are the advantages of using spacer structures in the semiconductor memory device?
Original Abstract Submitted
there is provided a semiconductor memory device comprising: a substrate; a base insulating film on an upper surface of the substrate; a plurality of first conductive patterns on the base insulating film and spaced apart from each other, wherein the plurality of first conductive patterns extend in a first direction; a spacer structure on a side surface of each of the plurality of first conductive patterns; a barrier metal film on a side surface of the spacer structure, wherein the barrier metal film extends through the base insulating film to be electrically connected to the substrate; a filling metal film on the barrier metal film, wherein the filling metal film fills at least a portion of a space between adjacent ones of the plurality of first conductive patterns; and a capacitor structure on the filling metal film, wherein the capacitor structure is electrically connected to the filling metal film.
