Samsung electronics co., ltd. (20240357787). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Kyung Hee Cho of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357787 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor memory device described in the abstract consists of a substrate with first and second surfaces, lower and upper active regions, gate electrodes, active contacts, connection structures, metal layers, and backside metal layer.
- Lower active region on the first surface includes a first lower gate electrode and a first lower active contact.
- Upper active region on the lower active region includes a first upper gate electrode and a first upper active contact that vertically overlap with the first lower active contact.
- First connection structure vertically connects the first upper active contact to the first lower active contact.
- First metal layer on the first surface includes a first node line electrically connecting the first gate electrode to the first upper active contact.
- The first upper gate electrode and the first lower gate electrode are connected to form a first gate electrode.
Potential Applications: - Memory devices - Integrated circuits - Electronic devices
Problems Solved: - Improved memory device performance - Enhanced data storage capabilities - Increased efficiency in semiconductor technology
Benefits: - Higher data processing speeds - Greater storage capacity - Enhanced overall device performance
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Next-Generation Electronics This technology can be utilized in various commercial applications such as: - Consumer electronics - Data storage systems - Automotive electronics
Prior Art: For prior art related to this technology, researchers can explore patents and publications in the field of semiconductor memory devices, gate electrodes, and active regions.
Frequently Updated Research: Researchers can stay updated on advancements in semiconductor memory devices, gate electrode technologies, and active region designs to enhance their understanding of the latest developments in the field.
Questions about Semiconductor Memory Devices: 1. How do semiconductor memory devices differ from traditional memory storage solutions? Semiconductor memory devices offer faster data access times and higher storage capacities compared to traditional memory solutions like hard disk drives.
2. What are the key factors influencing the performance of semiconductor memory devices? The performance of semiconductor memory devices is influenced by factors such as gate electrode design, active region structure, and connection configurations.
Original Abstract Submitted
a semiconductor memory device comprising a substrate having first and second surfaces opposite to each other, a lower active region on the first surface and including a first lower gate electrode and a first lower active contact, an upper active region on the lower active region and including a first upper gate electrode and a first upper active contact that vertically overlap at least a part of the first lower active contact, a first connection structure vertically connecting the first upper active contact to the first lower active contact, a first metal layer on the first surface, and a backside metal layer on the second surface. the first upper gate electrode and the first lower gate electrode are connected and form a first gate electrode. the first metal layer includes a first node line electrically connecting the first gate electrode to the first upper active contact.
