Samsung electronics co., ltd. (20240355883). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Myung Gil Kang of Suwon-si (KR)
Byeonghee Son of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355883 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract includes a substrate with an active pattern, a channel pattern consisting of stacked semiconductor patterns, a source/drain pattern connected to the semiconductor patterns, a gate electrode, and a blocking layer with a higher germanium concentration than the source/drain pattern.
- The device features a unique structure with stacked semiconductor patterns in the channel pattern.
- The source/drain pattern has protruding side surfaces towards the semiconductor patterns.
- The blocking layer is made of silicon-germanium (SiGe) with a higher germanium concentration than the source/drain pattern.
- This design enhances the performance and efficiency of the semiconductor device.
- The use of SiGe in the blocking layer improves the overall functionality of the device.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in the development of high-performance electronic devices.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Improves the functionality of electronic devices.
Benefits: - Increased performance and efficiency. - Enhanced functionality of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices with SiGe Blocking Layer This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Questions about the technology: 1. How does the use of SiGe in the blocking layer improve the performance of the semiconductor device? 2. What are the potential commercial applications of this advanced semiconductor technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and materials research to further enhance the performance and efficiency of electronic devices.
Original Abstract Submitted
a semiconductor device includes a substrate including an active pattern; a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are stacked to be spaced apart from each other; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode on the plurality of semiconductor patterns; and a blocking layer between the source/drain pattern and the active pattern, wherein the source/drain pattern includes a protruding side surface protruding toward the semiconductor patterns, the blocking layer includes silicon-germanium (sige), and a germanium concentration of the blocking layer is higher than a germanium concentration of the source/drain pattern.
