Samsung electronics co., ltd. (20240355879). STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
SEUNG MIN Song of hALFMOON NY (US)
KANG-ILL Seo of Springfield VA (US)
STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355879 titled 'STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTURES AND METHODS OF FORMING THE SAME
The integrated circuit device described in the patent application consists of an upper transistor structure on a substrate, a lower transistor structure between the substrate and the upper transistor structure, an upper insulating layer, and a lower gate contact.
- The upper transistor structure includes a pair of upper source/drain regions and an upper gate electrode.
- The lower transistor structure features a lower gate electrode.
- The upper gate electrode is located in the upper insulating layer.
- The lower gate contact extends through the upper insulating layer to connect with the lower gate electrode.
- The centers of the upper and lower gate electrodes are offset from each other in a horizontal direction perpendicular to the first direction.
Potential Applications: - This technology can be used in the development of advanced integrated circuits for various electronic devices. - It may find applications in the semiconductor industry for improving the performance of transistors.
Problems Solved: - This innovation addresses the need for more efficient and compact transistor structures in integrated circuits. - It solves the challenge of optimizing the layout and design of transistors for enhanced functionality.
Benefits: - Improved performance and efficiency of integrated circuits. - Enhanced functionality and miniaturization of electronic devices. - Potential cost savings in semiconductor manufacturing processes.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be commercialized for the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also be utilized in the automotive industry for advanced driver assistance systems and in the aerospace sector for satellite communication systems.
Questions about Integrated Circuit Device: 1. How does the offset between the centers of the upper and lower gate electrodes impact the performance of the integrated circuit device? 2. What are the specific advantages of having the upper gate electrode in the upper insulating layer in terms of circuit design and functionality?
Original Abstract Submitted
an integrated circuit device comprising: an upper transistor structure on a substrate, the upper transistor structure comprising a pair of upper source/drain regions spaced apart from each other in a first horizontal direction and an upper gate electrode between the pair of upper source/drain regions; a lower transistor structure between the substrate and the upper transistor structure, the lower transistor structure comprising a lower gate electrode; an upper insulating layer on the lower transistor structure, wherein the upper gate electrode is in the upper insulating layer; and a lower gate contact extending through the upper insulating layer and contacting the lower gate electrode, a center of the upper gate electrode in a second horizontal direction and a center of the lower gate electrode in the second horizontal direction are offset from each other in the second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction.
