Samsung electronics co., ltd. (20240355878). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Integrated Circuit Devices
- 1.13 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
SEUNG MIN Song of Halfmoon NY (US)
Panjae Park of Clifton Park NY (US)
Kang-Ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355878 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes integrated circuit devices with upper and lower transistor structures connected through an intergate contact.
- The upper transistor structure includes an upper channel region and an upper gate electrode.
- The lower transistor structure consists of a lower channel region and a lower gate electrode.
- An intergate contact connects the lower gate electrode to the upper gate electrode.
Key Features and Innovation
- Integration of upper and lower transistor structures in an integrated circuit device.
- Use of an intergate contact to connect the lower and upper gate electrodes.
- Protrusion of the intergate contact beyond the lower gate electrode's side surface.
Potential Applications
- Semiconductor industry for advanced integrated circuit design.
- Electronics manufacturing for improved transistor performance.
- Mobile devices for enhanced processing capabilities.
Problems Solved
- Improved connectivity between upper and lower transistor structures.
- Enhanced efficiency in integrated circuit devices.
- Better overall performance in electronic devices.
Benefits
- Increased speed and efficiency in data processing.
- Enhanced reliability and durability of integrated circuits.
- Improved functionality in electronic devices.
Commercial Applications
Title: Advanced Integrated Circuit Devices for Enhanced Performance This technology can be applied in various industries such as telecommunications, consumer electronics, and computing for faster and more reliable devices.
Prior Art
Readers can explore prior patents related to integrated circuit design, intergate contacts, and transistor structures to understand the evolution of this technology.
Frequently Updated Research
Researchers are constantly exploring new materials and designs to further improve the performance of integrated circuit devices.
Questions about Integrated Circuit Devices
What are the potential drawbacks of using intergate contacts in integrated circuit devices?
Intergate contacts may introduce additional complexity to the manufacturing process and could potentially affect the overall reliability of the device.
How does the protrusion of the intergate contact impact the electrical performance of the integrated circuit device?
The protrusion of the intergate contact may affect the electrical characteristics of the device, potentially influencing its overall performance.
Original Abstract Submitted
integrated circuit devices may include an upper transistor structure on a substrate, the upper transistor structure comprising an upper channel region and an upper gate electrode on the upper channel region; a lower transistor structure between the substrate and the upper transistor structure, the lower transistor structure comprising a lower channel region and a lower gate electrode on the lower channel region; and an intergate contact between the lower gate electrode and the upper gate electrode. the lower gate electrode may be electrically connected to the upper gate electrode through the intergate contact, and a portion of a lower surface of the intergate contact may protrude beyond a side surface of the lower gate electrode.
