Samsung electronics co., ltd. (20240355824). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED GATE STRUCTURES WITH DIFFERENT DIMENSIONS simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED GATE STRUCTURES WITH DIFFERENT DIMENSIONS
Organization Name
Inventor(s)
BYOUNGHAK Hong of Albany NY (US)
SEUNGHYUN Song of Albany NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED GATE STRUCTURES WITH DIFFERENT DIMENSIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355824 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED GATE STRUCTURES WITH DIFFERENT DIMENSIONS
Simplified Explanation: The patent application describes integrated circuit devices with stacked transistors on a substrate, where the upper transistor overlaps the lower transistor. The upper transistor has a wider gate structure than the lower transistor in a horizontal direction.
Key Features and Innovation:
- Stacked transistors on a substrate
- Overlapping upper and lower transistors
- Upper transistor with a wider gate structure than the lower transistor
Potential Applications: This technology could be applied in the semiconductor industry for the development of more efficient and compact integrated circuits.
Problems Solved: This technology addresses the need for improved performance and miniaturization in integrated circuit design.
Benefits: The benefits of this technology include enhanced functionality, increased efficiency, and space-saving design in integrated circuits.
Commercial Applications: The commercial applications of this technology could revolutionize the semiconductor industry by enabling the production of smaller, more powerful integrated circuits for various electronic devices.
Questions about Integrated Circuit Devices: 1. How does the overlapping of transistors in integrated circuits improve performance? 2. What are the advantages of having different widths in gate structures for upper and lower transistors in integrated circuits?
Frequently Updated Research: Researchers are constantly exploring new ways to enhance the performance and efficiency of integrated circuit devices through innovative design techniques and materials.
By optimizing the content for SEO and providing valuable information on the technology, this article aims to educate readers about the innovative features of integrated circuit devices and their potential applications in the semiconductor industry.
Original Abstract Submitted
integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate, and the upper transistor may overlap the lower transistor. the upper transistor may include an upper gate structure, and the lower transistor may include a lower gate structure, and the upper gate structure and the lower gate structure may have different widths in a horizontal direction.
