Samsung electronics co., ltd. (20240355757). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Jeonghyun Kim of Suwon-si (KR)
Changmin Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355757 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The present disclosure pertains to semiconductor devices and their fabrication methods. An example semiconductor device includes a substrate with a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. The key pattern features a key cell that is recessed at the upper portion of the substrate. The key cell has a bottom surface lower than the top surface of the dummy active pattern, along with multiple inner lateral surfaces surrounding the bottom surface. The inner lateral surfaces consist of a first inner lateral surface and a second inner lateral surface opposite to the first one. The ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface falls in a range of about 0.9 to about 1.1.
- Key Features and Innovation:
- Semiconductor device with a key pattern recessed at the upper portion of the substrate. - Key cell with inner lateral surfaces surrounding the bottom surface. - Specific ratio of silicon atom surface density in the inner lateral surfaces.
- Potential Applications:
- Advanced semiconductor manufacturing processes. - Enhanced performance and reliability in logic cell regions. - Improved integration of key patterns in semiconductor devices.
- Problems Solved:
- Addressing the need for precise key patterns in semiconductor devices. - Enhancing the structural integrity of key cells in the substrate. - Optimizing the silicon atom surface density for improved functionality.
- Benefits:
- Increased efficiency in semiconductor device fabrication. - Enhanced overall performance and reliability. - Potential for more advanced and compact semiconductor designs.
- Commercial Applications:
- Potential applications in the semiconductor industry for high-performance devices. - Market implications include improved product quality and competitiveness in the market.
- Prior Art:
- Researchers can explore prior patents related to semiconductor device fabrication and key pattern integration.
- Frequently Updated Research:
- Stay informed about the latest advancements in semiconductor manufacturing processes and key pattern design.
Questions about semiconductor device fabrication and key pattern integration: 1. How does the recessed key pattern in the semiconductor device improve performance? - The recessed key pattern allows for better integration and structural integrity in the device, enhancing overall functionality.
2. What are the key advantages of optimizing the silicon atom surface density in the inner lateral surfaces? - Optimizing the silicon atom surface density ensures uniformity and stability in the key pattern design, leading to improved device performance.
Original Abstract Submitted
the present disclosure relates to semiconductor devices and their fabrication methods. an example semiconductor device comprises a substrate including a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. the key pattern includes a key cell that is recessed at an upper portion of the substrate. the key cell includes a bottom surface lower than a top surface of the dummy active pattern, and a plurality of inner lateral surfaces that surround the bottom surface. the inner lateral surfaces include a first inner lateral surface and a second inner lateral surface opposite to the first inner lateral surface. a ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface is in a range of about 0.9 to about 1.1.
