Samsung electronics co., ltd. (20240355735). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hyemi Lee of Suwon-si (KR)

Seungyoon Kim of Suwon-si (KR)

Heesuk Kim of Suwon-si (KR)

Sangjae Lee of Suwon-si (KR)

Jaehoon Lee of Suwon-si (KR)

Juyoung Lim of Suwon-si (KR)

Minkyu Chung of Suwon-si (KR)

Sanghun Chun of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240355735 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

The semiconductor device described in the abstract consists of a plate layer, gate electrodes, and interlayer insulating layers stacked alternately in a first direction perpendicular to the upper surface of the plate layer. This forms a first stack structure and a second stack structure on top of the first stack structure. The device also includes a channel structure that extends through the gate electrodes in the first direction, as well as a contact plug that is electrically connected to one of the gate electrodes.

• The second stack structure includes a first gate electrode at the lowermost portion, a first interlayer insulating layer on the first gate electrode, and a second interlayer insulating layer on the first interlayer insulating layer. The first interlayer insulating layer has a greater thickness than the second interlayer insulating layer.

• The innovation lies in the specific arrangement of the gate electrodes and interlayer insulating layers, which allows for improved performance and efficiency of the semiconductor device.

• By optimizing the thickness of the interlayer insulating layers in the second stack structure, the device can achieve better electrical conductivity and overall functionality.

• This technology could be applied in various electronic devices that require high-performance semiconductor components, such as smartphones, computers, and other consumer electronics.

• The benefits of this innovation include enhanced device performance, increased efficiency, and potentially lower production costs due to improved design and functionality.

• Commercial applications of this technology could include the manufacturing of advanced electronic devices with superior semiconductor components, catering to industries such as telecommunications, computing, and automotive.

Questions about the technology:

1. How does the specific arrangement of gate electrodes and interlayer insulating layers contribute to the overall performance of the semiconductor device? 2. What potential impact could this technology have on the semiconductor industry in terms of efficiency and cost-effectiveness?

Original Abstract Submitted

a semiconductor device includes a plate layer, gate electrodes and interlayer insulating layers alternately stacked on the plate layer in a first direction perpendicular to an upper surface of the plate layer and forming a first stack structure and a second stack structure on the first stack structure, a channel structure penetrating through the gate electrodes and extending in the first direction, and a contact plug extending in the first direction and electrically connected to one of the gate electrodes, wherein the second stack structure includes a first gate electrode on a lowermost portion, a first interlayer insulating layer on the first gate electrode, and a second interlayer insulating layer on the first interlayer insulating layer, and the first interlayer insulating layer has a first thickness, and the second interlayer insulating layer has a second thickness smaller than the first thickness.