Samsung electronics co., ltd. (20240355727). INTEGRATED CIRCUIT DEVICES INCLUDING A CONDUCTIVE VIA AND METHODS OF FORMING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES INCLUDING A CONDUCTIVE VIA AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
JAEMYUNG Choi of Niskayuna NY (US)
Kang -Ill Seo of Springfield VA (US)
Se Jung Park of Watervliet NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING A CONDUCTIVE VIA AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355727 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A CONDUCTIVE VIA AND METHODS OF FORMING THE SAME
Simplified Explanation: The patent application describes integrated circuit devices with lower and upper metal wires connected by a metal via with a barrier layer.
- Lower and upper metal wires are connected by a metal via with a barrier layer.
- The metal via has a lower surface contacting the lower metal wire and an upper surface contacting the upper metal wire.
- A barrier layer extends on the side surface of the metal via.
- The upper portion of the barrier layer extends upwardly beyond the lower surface of the upper metal wire.
Key Features and Innovation:
- Integration of lower and upper metal wires with a metal via and barrier layer.
- Barrier layer extending on the side surface of the metal via.
- Upper portion of the barrier layer extending beyond the lower surface of the upper metal wire.
Potential Applications:
- Semiconductor industry for integrated circuit devices.
- Electronics manufacturing for improved circuit connectivity.
Problems Solved:
- Enhanced connectivity between metal wires in integrated circuits.
- Improved reliability and performance of integrated circuit devices.
Benefits:
- Increased efficiency in circuit design.
- Enhanced signal transmission between metal wires.
- Improved overall performance and reliability of integrated circuits.
Commercial Applications: The technology can be applied in the semiconductor industry for manufacturing integrated circuit devices, leading to improved performance and reliability in electronic devices.
Questions about Integrated Circuit Devices: 1. How does the barrier layer contribute to the performance of integrated circuit devices? 2. What are the potential challenges in implementing this technology in large-scale production?
Frequently Updated Research: Ongoing research in the semiconductor industry focuses on developing advanced materials and processes for integrated circuit devices to enhance performance and reliability.
Original Abstract Submitted
integrated circuit devices and methods of forming the same are provided. the integrated circuit devices may include a lower metal wire, an upper metal wire on the lower metal wire, a metal via between the lower metal wire and the upper metal wire, the metal via including a lower surface and an upper surface that respectively contact the lower metal wire and the upper metal wire, and a barrier layer extending on a side surface of the metal via. an upper portion of the barrier layer may extend upwardly beyond a lower surface of the upper metal wire.
