Samsung electronics co., ltd. (20240355637). METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

John Soo Kim of Suwon-si (KR)

Gwan Ho Kim of Suwon-si (KR)

Ji Yoon Kim of Suwon-si (KR)

Heung Sik Park of Suwon-si (KR)

Keun Hee Bai of Suwon-si (KR)

Jong Min Baek of Suwon-si (KR)

Do Haing Lee of Suwon-si (KR)

Jong Sun Lee of Suwon-si (KR)

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240355637 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

The abstract of the patent application describes a method for fabricating a semiconductor device by forming a mask layer on a substrate with a through hole that exposes the substrate's upper surface. The mask layer consists of a first mask layer and a second mask layer, with the second mask layer containing carbon. A liner layer is then formed on the side walls of the through hole inside the second mask layer.

• The method involves forming a mask layer on a substrate with a through hole.
• The mask layer comprises a first mask layer and a second mask layer containing carbon.
• A liner layer is formed on the side walls of the through hole inside the second mask layer.

Potential Applications: - Semiconductor manufacturing - Electronics industry

Problems Solved: - Enhancing semiconductor device fabrication processes - Improving the efficiency of mask layer formation

Benefits: - Increased precision in semiconductor device fabrication - Enhanced performance of semiconductor devices

Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology can be utilized in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in various electronic applications.

Questions about the technology: 1. How does the presence of carbon in the second mask layer impact the fabrication process? 2. What are the potential implications of using a liner layer in the through hole of the mask layer?

Original Abstract Submitted

a for fabricating a semiconductor device comprises forming a mask layer on a substrate, the mask layer defining a through hole that exposes an upper surface of the substrate, the mask layer comprising a first mask layer and a second mask layer, wherein the second mask layer is between the substrate and the first mask layer, and wherein the second mask layer comprises carbon. the method includes forming a liner layer on side walls of the through hole inside the second mask layer.