Samsung electronics co., ltd. (20240353748). METHOD FOR GENERATING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
METHOD FOR GENERATING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Sang Chul Yeo of Suwon-si (KR)
METHOD FOR GENERATING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240353748 titled 'METHOD FOR GENERATING OPTICAL PROXIMITY CORRECTION MODEL AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
The abstract describes a method for correcting an optical proximity correction (OPC) model by measuring target CD values at different points on a target pattern, simulating the OPC model, and fitting the model based on the measurements.
- Method for correcting an OPC model by measuring target CD values at specific points on a target pattern.
- Simulating the OPC model using the measured CD values at evaluation points on the contour of the model.
- Fitting the OPC model based on the measurements at each evaluation point.
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Optical proximity correction in integrated circuit design
Problems Solved: - Improving accuracy of OPC models - Enhancing semiconductor manufacturing processes - Optimizing photolithography techniques
Benefits: - Increased precision in semiconductor fabrication - Enhanced quality of integrated circuits - Improved performance of optical proximity correction models
Commercial Applications: Title: "Advanced Optical Proximity Correction Model Correction Method" This technology can be used in semiconductor fabrication facilities to improve the accuracy and efficiency of optical proximity correction models, leading to higher quality integrated circuits and enhanced manufacturing processes.
Prior Art: Researchers in the field of semiconductor manufacturing have explored various methods for improving the accuracy of OPC models, including the use of machine learning algorithms and advanced simulation techniques.
Frequently Updated Research: Ongoing research in the field of optical proximity correction focuses on developing more sophisticated algorithms and techniques for correcting OPC models to meet the increasing demands of the semiconductor industry.
Questions about Optical Proximity Correction Model Correction Method: 1. How does this method compare to existing techniques for correcting OPC models? This method offers a more precise and targeted approach to correcting OPC models by directly measuring CD values at specific points on the target pattern.
2. What are the potential implications of using this method in semiconductor manufacturing? Implementing this method can lead to significant improvements in the quality and efficiency of semiconductor fabrication processes, ultimately enhancing the performance of integrated circuits.
Original Abstract Submitted
a method for correcting an optical proximity correction (opc) model is provided. the method comprises measuring a first target cd value at a first measurement point of an sem image for a target pattern and measuring a second target cd value at a second measurement point, simulating the opc model by using the first target cd value with respect to a first evaluation point corresponding to the first measurement point on a contour of the opc model for the target pattern, simulating the opc model by using the second target cd value with respect to a second evaluation point corresponding to the second measurement point on the contour, and fitting the opc model with respect to each of the first evaluation point and the second evaluation point.
