Intel corporation (20240355934). INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD SOURCE AND DRAIN simplified abstract
Contents
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD SOURCE AND DRAIN
Organization Name
Inventor(s)
Mahmut Sami Kavrik of Eugene OR (US)
Tristan A. Tronic of Aloha OR (US)
Jennifer Lux of Hillsboro OR (US)
Uygar E. Avci of Portland OR (US)
Kevin P. O'brien of Portland OR (US)
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD SOURCE AND DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355934 titled 'INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD SOURCE AND DRAIN
The abstract describes transistors utilizing monolayer transition metal dichalcogenides (TMD) semiconductor material, consisting of a combination of a transition metal (e.g., molybdenum or tungsten) and a chalcogen (e.g., sulfur or selenium) in a hexagonal crystal structure. The transistor features a single layer of TMD forming the channel region, with multiple layers of TMD at the source and drain regions. Doped upper portions of the multilayer TMD source and drain regions are present, with conductive contacts formed over the doped sections.
- Transistors with monolayer transition metal dichalcogenides (TMD) semiconductor material
- TMD materials consist of a transition metal and a chalcogen in a hexagonal crystal structure
- Single layer of TMD in the channel region, multiple layers at the source and drain regions
- Doped upper portions of the multilayer TMD source and drain regions
- Conductive contacts formed over the doped sections
Potential Applications: - Advanced electronic devices - High-performance computing systems - Semiconductor industry for improved transistor technology
Problems Solved: - Enhancing transistor performance - Increasing efficiency in electronic devices - Utilizing innovative semiconductor materials
Benefits: - Improved conductivity - Enhanced transistor functionality - Potential for smaller and more efficient electronic devices
Commercial Applications: Title: Advanced Transistor Technology with Monolayer TMD Semiconductor Material This technology could revolutionize the semiconductor industry by providing more efficient and high-performance transistors for various electronic applications. The market implications include advancements in computing systems, mobile devices, and other electronic products.
Questions about Transistors with Monolayer TMD Semiconductor Material: 1. How do transistors with TMD semiconductor material compare to traditional transistors in terms of performance? - Transistors with TMD semiconductor material offer improved conductivity and efficiency compared to traditional transistors. 2. What are the potential challenges in implementing TMD semiconductor material in commercial electronic devices? - Some challenges may include scalability, cost-effectiveness, and integration with existing technologies.
Original Abstract Submitted
described herein are transistors with monolayer transition metal dichalcogenides (tmd) semiconductor material. tmd materials include combination of a transition metal (e.g., molybdenum or tungsten) and a chalcogen (e.g., sulfur or selenium) in a monolayer having a hexagonal crystal structure. a transistor has a single layer of tmd forming a channel region, and multiple layers of the tmd material at the source and drain regions. upper portions of the multilayer tmd source and drain regions are doped, and conductive contacts are formed over the doped portions.
