Intel corporation (20240355915). BACKSIDE CONDUCTIVE STRUCTURES EXTENDING THROUGH INTEGRATED CIRCUIT TO MEET FRONTSIDE CONTACTS simplified abstract

BACKSIDE CONDUCTIVE STRUCTURES EXTENDING THROUGH INTEGRATED CIRCUIT TO MEET FRONTSIDE CONTACTS

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Clifford J. Engel of Hillsboro OR (US)

Debaleena Nandi of Hillsboro OR (US)

Gary Allen of Portland OR (US)

Nicholas A. Thomson of Hillsboro OR (US)

Saurabh Acharya of Hillsboro OR (US)

Umang Desai of Portland OR (US)

Vivek Vishwakarma of Hillsboro OR (US)

Charles H. Wallace of Portland OR (US)

BACKSIDE CONDUCTIVE STRUCTURES EXTENDING THROUGH INTEGRATED CIRCUIT TO MEET FRONTSIDE CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240355915 titled 'BACKSIDE CONDUCTIVE STRUCTURES EXTENDING THROUGH INTEGRATED CIRCUIT TO MEET FRONTSIDE CONTACTS

The abstract describes techniques for forming an integrated circuit with backside conductive structures that extend through the device layer to contact frontside contacts.

• Backside conductive structures extend through the device layer to contact frontside source or drain contacts.
• Gate cuts separate semiconductor devices along a row, with dielectric walls extending through the gate structure and between source or drain regions.
• Backside conductive structures extend through source or drain regions and dielectric walls to contact frontside contacts.

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry

Problems Solved: - Enhancing connectivity in integrated circuits - Improving contact between backside and frontside structures

Benefits: - Increased efficiency in circuit design - Enhanced performance of semiconductor devices

Commercial Applications: Title: "Advanced Integrated Circuit Technology for Enhanced Connectivity" This technology can be used in the development of high-performance electronic devices, leading to improved functionality and reliability in various consumer electronics, automotive systems, and industrial applications.

Prior Art: Researchers can explore prior patents related to integrated circuit design, semiconductor manufacturing, and backside conductive structures to gain insights into the evolution of this technology.

Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further enhance the performance and efficiency of integrated circuits with backside conductive structures.

Questions about Integrated Circuit Technology with Backside Conductive Structures: 1. How does the integration of backside conductive structures improve the performance of semiconductor devices? 2. What are the key challenges in implementing backside conductive structures in integrated circuits?

Original Abstract Submitted

techniques are provided herein to form an integrated circuit that includes one or more backside conductive structures that extend through the device layer to contact one or more frontside contacts, such as frontside source or drain contacts. in an example, a given semiconductor device along a row of such devices may be separated from an adjacent semiconductor device along the row by a gate cut. the gate cut may be a dielectric wall that extends through an entire thickness of the gate structure around the semiconductor regions of the devices and also extends between source or drain regions of the devices. a backside conductive structure may extend through portions of the source or drain regions and also through a portion of one of the dielectric walls within the gate trench to contact one or more frontside contacts on the source or drain regions.