Intel corporation (20240355903). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES simplified abstract
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES
Organization Name
Inventor(s)
Biswajeet Guha of Hillsboro OR (US)
Dax M. Crum of Beaverton OR (US)
Stephen M. Cea of Hillsboro OR (US)
Leonard P. Guler of Hillsboro OR (US)
Tahir Ghani of Portland OR (US)
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355903 titled 'SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES
The patent application describes self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substrates.
- Integrated circuit structure includes a semiconductor nanowire above an insulator substrate.
- Gate structure surrounds the semiconductor nanowire, with a pair of gate endcap isolation structures at each end.
- The gate endcap isolation structures are directly adjacent to the ends of the gate structure.
Potential Applications: - Advanced semiconductor devices - Nanotechnology - Integrated circuits
Problems Solved: - Improved performance of semiconductor devices - Enhanced gate control - Reduction of leakage currents
Benefits: - Higher efficiency - Increased speed - Enhanced reliability
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be used in the development of next-generation electronic devices, leading to faster and more reliable products in various industries such as telecommunications, computing, and consumer electronics.
Questions about SAGE architectures: 1. How do SAGE architectures improve the performance of semiconductor devices? SAGE architectures enhance gate control and reduce leakage currents, leading to improved efficiency and speed in electronic devices.
2. What are the potential applications of gate-all-around devices above insulator substrates? Gate-all-around devices can be utilized in nanotechnology and integrated circuits to achieve higher performance and reliability.
Original Abstract Submitted
self-aligned gate endcap (sage) architectures with gate-all-around devices above insulator substrates, and methods of fabricating self-aligned gate endcap (sage) architectures with gate-all-around devices above insulator substrates, are described. in an example, an integrated circuit structure includes includes a semiconductor nanowire above an insulator substrate and having a length in a first direction. a gate structure is around the semiconductor nanowire, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. a pair of gate endcap isolation structures is included. the first of the pair of gate endcap isolation structures is directly adjacent to the first end of the gate structure, and the second of the pair of gate endcap isolation structures is directly adjacent to the second end of the gate structure.
