Intel corporation (20240355891). CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS simplified abstract
Contents
CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Shengsi Liu of Portland OR (US)
Saurabh Acharya of Hillsboro OR (US)
Meenakshisundaram Ramanathan of Hillsboro OR (US)
Charles H. Wallace of Portland OR (US)
Ankit Kirit Lakhani of Hillsboro OR (US)
CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355891 titled 'CONDUCTIVE BRIDGE THROUGH DIELECTRIC WALL BETWEEN SOURCE OR DRAIN CONTACTS
Simplified Explanation: This patent application describes techniques for forming semiconductor devices with a conductive bridge between topside contacts on adjacent source or drain regions, extending through a dielectric wall that separates them.
- The innovation involves creating a conductive bridge connecting topside contacts on adjacent source or drain regions through a dielectric wall.
- The bridge allows for electrical connection between different semiconductor devices.
- The bridge is formed between gate structures on different semiconductor regions.
- This technology enables improved connectivity and functionality in semiconductor devices.
- The conductive bridge enhances the performance and efficiency of the semiconductor devices.
Potential Applications: This technology can be applied in the semiconductor industry for the development of advanced electronic devices such as transistors, integrated circuits, and memory devices.
Problems Solved: This technology addresses the challenge of establishing electrical connections between adjacent semiconductor devices efficiently and effectively.
Benefits: The benefits of this technology include enhanced connectivity, improved performance, and increased functionality of semiconductor devices.
Commercial Applications: This innovation has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices for various applications.
Questions about Semiconductor Device with Conductive Bridge: 1. How does the conductive bridge improve the functionality of semiconductor devices? 2. What are the potential applications of this technology in the electronics industry?
Original Abstract Submitted
techniques are provided herein to form semiconductor devices that include a conductive bridge between topside contacts on adjacent source or drain regions. the conductive bridge extends through a dielectric wall that separates the adjacent source or drain regions. in an example, a first semiconductor device includes a first gate structure around or otherwise on a first semiconductor region (or channel region) that extends from a first source or drain region, and a second adjacent semiconductor device includes a second gate structure around or otherwise on a second semiconductor region that extends from a second source or drain region. a conductive bridge connects a first conductive contact on a top surface of the first source or drain region with a second conductive contact on a top surface of the adjacent second source or drain region through a dielectric wall that otherwise separates the conductive contacts.
- Intel corporation
- Leonard P. Guler of Hillsboro OR (US)
- Shengsi Liu of Portland OR (US)
- Saurabh Acharya of Hillsboro OR (US)
- Baofu Zhu of Portland OR (US)
- Meenakshisundaram Ramanathan of Hillsboro OR (US)
- Charles H. Wallace of Portland OR (US)
- Ankit Kirit Lakhani of Hillsboro OR (US)
- H01L29/417
- H01L27/092
- H01L29/06
- H01L29/423
- H01L29/778
- H01L29/786
- CPC H01L29/41733