Intel corporation (20240355819). INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKSIDE POWER DELIVERY simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKSIDE POWER DELIVERY
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Marni Nabors of Portland OR (US)
Nikolay Ryzhenko of Beaverton OR (US)
Xinning Wang of Portland OR (US)
Sivakumar Venkataraman of Hillsboro OR (US)
INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKSIDE POWER DELIVERY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355819 titled 'INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKSIDE POWER DELIVERY
The abstract describes integrated circuit structures with front side signal lines and backside power delivery. These structures include gate lines over semiconductor nanowire stack or fin channel structures, and trench contacts over source or drain structures within a cell boundary.
- Plurality of gate lines over semiconductor nanowire stack or fin channel structures
- Plurality of trench contacts over source or drain structures within the cell boundary
- Front side signal lines and backside power delivery line within the cell boundary
- Backside power delivery line coupled to one of the trench contacts
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Efficient power delivery in integrated circuits - Improved signal transmission in semiconductor devices
Benefits: - Enhanced performance of integrated circuits - Increased efficiency in power delivery - Better signal integrity in semiconductor devices
Commercial Applications: Title: "Advanced Integrated Circuit Structures for Enhanced Performance" This technology can be used in various commercial applications such as mobile devices, computers, and other electronic gadgets. It can also benefit industries like telecommunications, automotive, and aerospace.
Prior Art: Researchers can explore prior patents related to integrated circuit structures, semiconductor devices, and power delivery in electronics to understand the existing technology landscape.
Frequently Updated Research: Researchers can stay updated on advancements in semiconductor manufacturing, integrated circuit design, and power delivery technologies to enhance their understanding of this field.
Questions about Integrated Circuit Structures: 1. How does the placement of trench contacts impact the performance of integrated circuits? 2. What are the key challenges in integrating front side signal lines with backside power delivery in semiconductor devices?
Original Abstract Submitted
integrated circuit structures having front side signal lines and backside power delivery are described. in an example, an integrated circuit structure includes a plurality of gate lines extending over a plurality of semiconductor nanowire stack or fin channel structures within a cell boundary. a plurality of trench contacts is extending over a plurality of source or drain structures within the cell boundary, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. a first signal line, a second signal line, a third signal line, and a fourth signal line are over the plurality of gate lines and the plurality of trench contacts within the cell boundary. a backside power delivery line is coupled to one of the plurality of trench contacts within the cell boundary.
