Intel corporation (20240355682). EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND simplified abstract
Contents
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND
Organization Name
Inventor(s)
Varun Mishra of Hillsboro OR (US)
Stephen M. Cea of Hillsboro OR (US)
Cory E. Weber of Hillsboro OR (US)
Jack T. Kavalieros of Portland OR (US)
Tahir Ghani of Portland OR (US)
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355682 titled 'EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND
Simplified Explanation: This patent application discusses extending a nanocomb transistor architecture to implement gate all around, providing a gate enclosure on all sides of each nanoribbon in a vertical stack of lateral nanoribbons. This involves using two etch-selective dielectric wall materials instead of one, potentially improving the short-channel effects of conventional nanocomb transistor arrangements.
- Gate all around implementation in nanocomb transistor architecture
- Use of two etch-selective dielectric wall materials
- Potential improvement in short-channel effects
Potential Applications: 1. Advanced semiconductor devices 2. Nanoelectronics 3. Integrated circuits
Problems Solved: 1. Short-channel effects in conventional nanocomb transistor arrangements
Benefits: 1. Enhanced transistor performance 2. Improved control over transistor operation 3. Potential for smaller and more efficient electronic devices
Commercial Applications: Title: Enhanced Nanocomb Transistor Technology for Advanced Semiconductor Devices This technology could be utilized in the development of more efficient and compact electronic devices, leading to advancements in various industries such as consumer electronics, telecommunications, and computing.
Prior Art: Readers interested in prior art related to this technology may explore research papers, patents, and publications in the field of nanoelectronics, semiconductor devices, and transistor architectures.
Frequently Updated Research: Researchers in the field of nanoelectronics are continually exploring new materials and techniques to enhance the performance of transistors, including gate all around implementations in nanocomb transistor architectures.
Questions about Nanocomb Transistor Technology: 1. How does gate all around implementation improve transistor performance? 2. What are the key challenges in integrating two etch-selective dielectric wall materials in nanocomb transistor architectures?
Original Abstract Submitted
embodiments of the present disclosure are based on extending a nanocomb transistor architecture to implement gate all around, meaning that a gate enclosure of at least a gate dielectric material, or both a gate dielectric material and a gate electrode material, is provided on all sides of each nanoribbon of a vertical stack of lateral nanoribbons of a nanocomb transistor arrangement. in particular, extension of a nanocomb transistor architecture to implement gate all around, proposed herein, involves use of two dielectric wall materials which are etch-selective with respect to one another, instead of using only a single dielectric wall material used to implement conventional nanocomb transistor arrangements. nanocomb-based transistor arrangements implementing gate all around as described herein may provide improvements in terms of the short-channel effects of conventional nanocomb transistor arrangements.
