Intel corporation (20240353882). LOW POWER HYBRID REVERSE BANDGAP REFERENCE AND DIGITAL TEMPERATURE SENSOR simplified abstract
Contents
LOW POWER HYBRID REVERSE BANDGAP REFERENCE AND DIGITAL TEMPERATURE SENSOR
Organization Name
Inventor(s)
David Duarte of Portland OR (US)
Yongping Fan of Portland OR (US)
LOW POWER HYBRID REVERSE BANDGAP REFERENCE AND DIGITAL TEMPERATURE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240353882 titled 'LOW POWER HYBRID REVERSE BANDGAP REFERENCE AND DIGITAL TEMPERATURE SENSOR
Simplified Explanation: The patent application describes a low power hybrid reverse bandgap reference and digital temperature sensor using subthreshold metal oxide semiconductor transistors.
Key Features and Innovation:
- Utilizes subthreshold metal oxide semiconductor transistors
- Low power consumption
- Hybrid design combining bandgap reference and digital temperature sensor
Potential Applications: This technology can be used in various applications such as IoT devices, wearables, and temperature monitoring systems.
Problems Solved: This technology addresses the need for low power consumption in temperature sensing applications.
Benefits:
- Low power consumption
- Accurate temperature sensing
- Compact design
Commercial Applications: Potential commercial applications include smart home devices, medical devices, and industrial temperature monitoring systems.
Prior Art: Readers can start searching for prior art related to this technology in the field of low power temperature sensors and bandgap references.
Frequently Updated Research: Stay updated on advancements in subthreshold metal oxide semiconductor technology and low power sensor design.
Questions about the Technology: 1. What are the advantages of using subthreshold metal oxide semiconductor transistors in temperature sensing applications? 2. How does the hybrid design of the bandgap reference and digital temperature sensor improve overall performance?
Original Abstract Submitted
a low power hybrid reverse (lphr) bandgap reference (bgr) and digital temperature sensor (dts) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (mos) transistors.
