17894524. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyunmook Choi of Suwon-si (KR)
Kyoungcho Na of Hwaseong-si, (KR)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17894524 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device. Here is a simplified explanation of the abstract:
- The method involves the formation of two substrates, with a stack region formed by alternating layers of interlayer insulating and sacrificial materials on top of one of the substrates.
- First openings are created by partially removing the stack region, and a filling insulating layer is formed in these openings.
- A second opening is created by partially removing the stack region between the first openings.
- The exposed sacrificial layers in the second opening are removed.
- A lower separation region is formed by filling the second opening with a filling insulating layer, resulting in a structure that includes both the first filling insulating layer and the second filling insulating layer.
Potential applications of this technology:
- Manufacturing of semiconductor devices such as integrated circuits and microprocessors.
- Fabrication of advanced memory devices like flash memory or DRAM.
Problems solved by this technology:
- Provides a method for creating a lower separation region in a semiconductor device, which can be useful for isolating different components or layers.
- Enables the formation of complex structures with multiple layers and openings.
Benefits of this technology:
- Simplifies the manufacturing process of semiconductor devices by providing a method for creating a lower separation region.
- Allows for the creation of more advanced and compact semiconductor devices with improved performance and functionality.
Original Abstract Submitted
A method for manufacturing a semiconductor device including forming a first substrate and a second substrate thereon; forming a first stack region by alternately stacking first interlayer insulating and sacrificial layers on the second substrate; forming a second stack region by alternately stacking second interlayer insulating and sacrificial layers on the first stack region; forming first openings spaced apart from each other in the first direction by partially removing the second stack region; forming a first filling insulating layer in the first openings; forming a second opening by partially removing the second stack region between the first openings; removing the second sacrificial layers exposed through the second opening; forming a lower separation region including the first filling insulating layer and a second filling insulating layer, by forming the second filling insulating layer in the second opening and regions in which the second sacrificial layers have been removed.
