17956102. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kiseok Lee of Hwaseong-si (KR)

Taegyu Kang of Suwon-si (KR)

Keunnam Kim of Yongin-si (KR)

Sung-Min Park of Seongnam-si (KR)

Taehyun An of Seoul (KR)

Sanghyun Lee of Seoul (KR)

Eunsuk Jang of Hwaseong-si (KR)

Moonyoung Jeong of Suwon-si (KR)

Euichul Jeong of Yongin-si (KR)

Hyungeun Choi of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956102 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a semiconductor memory device that includes a word line, a channel pattern, a bit line, and a data storage element.

• The word line is extended parallel to the top surface of the semiconductor substrate.
• The channel pattern crosses the word line and has a long axis parallel to the top surface.
• The bit line is extended perpendicular to the top surface and is in contact with a first side surface of the channel pattern.
• The data storage element is in contact with a second side surface of the channel pattern, opposite to the first side surface.
• The channel pattern includes a first dopant region adjacent to the bit line, a second dopant region adjacent to the data storage element, and a channel region between the first and second dopant regions, overlapped with the word line.
• At least one of the first and second dopant regions includes a low concentration region adjacent to the channel region, and a high concentration region spaced apart from the channel region.

Potential applications of this technology:

• Memory devices in electronic devices such as smartphones, tablets, and computers.
• Data storage in cloud computing and data centers.
• Embedded memory in various electronic systems.

Problems solved by this technology:

• Improved performance and reliability of semiconductor memory devices.
• Enhanced data storage capacity and speed.
• Reduction of power consumption and heat generation.

Benefits of this technology:

• Higher density of data storage.
• Faster read and write operations.
• Lower power consumption and improved energy efficiency.

Original Abstract Submitted

A semiconductor memory device includes a word line extended parallel to a top surface of a semiconductor substrate, a channel pattern crossing the word line and having a long axis parallel to the top surface, a bit line extended perpendicular to the top surface and in contact with a first side surface of the channel pattern, and a data storage element in contact with a second side surface of the channel pattern opposite to the first side surface. The channel pattern includes a first dopant region adjacent to the bit line, a second dopant region adjacent to the data storage element, and a channel region between the first and second dopant regions and overlapped with the word line. At least one of the first and second dopant regions includes a low concentration region adjacent to the channel region, and a high concentration region spaced apart from the channel region.