18756056. SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ki Hong Lee of Suwon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18756056 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a source layer, a stack structure, a channel layer, a slit, and a source pick-up line. The source layer has at least one groove on its upper surface, and the stack structure is formed over it. The channel layer passes through the stack structure and is in contact with the source layer. The slit exposes the groove of the source layer, and the source pick-up line is formed in the slit and the groove, making contact with the source layer.
- Source layer with grooves on its upper surface
- Stack structure formed over the source layer
- Channel layer passing through the stack structure and in contact with the source layer
- Slit exposing the groove of the source layer
- Source pick-up line formed in the slit and the groove, making contact with the source layer
Potential Applications: - Semiconductor manufacturing - Electronics industry - Renewable energy technologies
Problems Solved: - Enhanced performance of semiconductor devices - Improved efficiency in energy conversion - Increased reliability in electronic components
Benefits: - Higher functionality and performance - Greater energy efficiency - Enhanced durability and longevity
Commercial Applications: Title: Advanced Semiconductor Devices for Improved Performance This technology can be utilized in various commercial applications such as: - Solar panels - Consumer electronics - Power management systems
Questions about the technology: 1. How does the source pick-up line improve the functionality of the semiconductor device? 2. What are the potential implications of this technology in the renewable energy sector?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and its applications in various industries.
Original Abstract Submitted
A semiconductor device may include a source layer, a stack structure, a channel layer, a slit, and a source pick-up line. The source layer may include at least one groove in an upper surface thereof. The stack structure may be formed over the source layer. The channel layer may pass through the stack structure. The channel layer may be in contact with the source layer. The slit may pass through the stack structure. The slit may expose the groove of the source layer therethrough. The source pick-up line may be formed in the slit and the groove. The source pick-up line may be contacted with the source layer.
