18362688. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362688 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a gate structure with stacked word lines situated between a bit line and a source structure. Additionally, there is a select line structure positioned between the gate structure and the source structure, comprising an epitaxial pattern and a silicide layer. The device also features a channel structure that extends through the gate structure and the select line structure, connecting the source structure and the bit line.
- The gate structure of the semiconductor device includes stacked word lines.
- A select line structure with an epitaxial pattern and a silicide layer is located between the gate structure and the source structure.
- The channel structure extends through the gate structure and the select line structure, connecting the source structure and the bit line.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in memory devices, logic circuits, and other semiconductor-based systems.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a more compact and integrated design for electronic systems.
Benefits: - Improved functionality and speed of semiconductor devices. - Increased integration and miniaturization capabilities. - Enhanced overall performance of electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Systems This technology could be utilized in the production of high-performance memory devices, logic circuits, and other semiconductor-based products. Its compact design and improved efficiency make it a valuable asset in the electronics industry, potentially leading to the development of faster and more reliable electronic systems.
Questions about the Technology: 1. How does the channel structure in the semiconductor device contribute to its overall performance? 2. What are the potential market implications of implementing this advanced semiconductor technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and the integration of novel structures in electronic systems for improved performance and efficiency.
Original Abstract Submitted
A semiconductor device includes a gate structure located between a bit line and a source structure, the gate structure including stacked word lines. The semiconductor device also includes a select line structure located between the gate structure and the source structure, the select line structure including an epitaxial pattern and a silicide layer. The semiconductor device further includes a channel structure extending through the gate structure and the select line structure, the channel structure connected between the source structure and the bit line.
