18500115. SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS
Organization Name
Inventor(s)
Young Gwang Yoon of Gyeonggi-do (KR)
Yun Ik Son of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18500115 titled 'SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYERS
Simplified Explanation:
This semiconductor device consists of four gate structures, each with a high-k gate dielectric layer containing specific dipole materials with varying concentrations.
Key Features and Innovation:
- Four gate structures with high-k gate dielectric layers
- Different dipole materials and concentrations in each gate structure
Potential Applications: This technology can be used in advanced semiconductor devices for various electronic applications.
Problems Solved:
- Enhancing performance and efficiency of semiconductor devices
- Improving gate dielectric properties
Benefits:
- Increased functionality and reliability of semiconductor devices
- Enhanced performance and efficiency
Commercial Applications: Potential commercial applications include the semiconductor industry for the development of advanced electronic devices.
Prior Art: Readers can explore prior research on high-k gate dielectric materials and their impact on semiconductor device performance.
Frequently Updated Research: Stay updated on the latest advancements in high-k gate dielectric materials and their applications in semiconductor devices.
Questions about Semiconductor Devices with High-k Gate Dielectric Layers: 1. What are the key features of semiconductor devices with high-k gate dielectric layers? 2. How do varying concentrations of dipole materials impact the performance of semiconductor devices?
Original Abstract Submitted
A semiconductor device includes a first gate structure including a first N-type high-k gate dielectric layer, a second gate structure comprising a first P-type high-k gate dielectric layer, a third gate structure including a second N-type high-k gate dielectric layer, and a fourth gate structure including a second P-type high-k gate dielectric layer. The first N-type high-k gate dielectric layer includes an N-type dipole material with a first concentration. The first P-type high-k gate dielectric layer includes a P-type dipole material with a second concentration. The second N-type high-k gate dielectric layer includes the N-type dipole material with a third concentration. The second P-type high-k gate dielectric layer includes the P-type dipole material with a fourth concentration. The first concentration is higher than the third concentration, and the second concentration is higher than the fourth concentration.
