18294644. SOLID-STATE IMAGING DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

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SOLID-STATE IMAGING DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

YUKIHITO Iida of KANAGAWA (JP)

SOLID-STATE IMAGING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18294644 titled 'SOLID-STATE IMAGING DEVICE

Simplified Explanation:

This patent application describes a solid-state imaging device that includes a photoelectric conversion element, transfer transistors, a pixel array, a floating diffusion, a pixel circuit, a switch, and a variable capacitor.

  • The device converts light into electric charge through photoelectric conversion.
  • The electric charge is transferred within the pixel using transfer transistors and a floating diffusion.
  • A pixel circuit converts the electric charge into electric signals.
  • A switch controls the conductive state of the floating diffusion based on the electric charge amount.
  • A variable capacitor adjusts its capacitance value based on the electric charge amount.

Key Features and Innovation:

  • Utilizes a floating diffusion to transfer electric charge within the pixel.
  • Incorporates a switch and variable capacitor to control and adjust the electric charge amount.
  • Enables efficient conversion of light into electric signals for imaging purposes.

Potential Applications:

  • Digital cameras
  • Surveillance systems
  • Medical imaging devices

Problems Solved:

  • Efficient transfer and conversion of electric charge in solid-state imaging devices.
  • Control and adjustment of electric charge amount within pixels.

Benefits:

  • Improved image quality
  • Enhanced control over electric charge transfer
  • Increased efficiency in converting light into electric signals

Commercial Applications:

Potential commercial applications include:

  • Digital camera manufacturing
  • Surveillance system development
  • Medical imaging device production

Questions about Solid-State Imaging Devices:

1. How does the use of a floating diffusion improve the performance of solid-state imaging devices? 2. What are the advantages of using a variable capacitor in controlling the electric charge amount in pixels?


Original Abstract Submitted

A solid-state imaging device includes: a photoelectric conversion element that generates electric charge from light through photoelectric conversion; a transfer transistor that is coupled to the photoelectric conversion element; a pixel in which a plurality of the photoelectric conversion elements and a plurality of the transfer transistors are arrayed; a floating diffusion that is commonly coupled, with the respective transfer transistors interposed in between, to the plurality of photoelectric conversion elements of the pixel, and transfers the electric charge; a pixel circuit that is coupled to the floating diffusion and converts the electric charge into electric signals; a switch that has a first main electrode coupled to the floating diffusion and has a first control electrode to which a first control signal is inputted, the first control signal controlling a conductive state and a non-conductive state in accordance with an electric charge amount of the floating diffusion; and a variable capacitor that has a first electrode coupled to a second main electrode of the switch and has a second electrode to which a second control signal is inputted, the second control signal controlling a capacitance value in accordance with the electric charge amount.