18682296. PHOTODETECTOR AND ELECTRONIC APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Contents
PHOTODETECTOR AND ELECTRONIC APPARATUS
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
HIROSHI Isobe of KANAGAWA (JP)
TAICHI Yamada of KANAGAWA (JP)
YOICHI Negoro of KANAGAWA (JP)
PHOTODETECTOR AND ELECTRONIC APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18682296 titled 'PHOTODETECTOR AND ELECTRONIC APPARATUS
The photodetector described in the patent application aims to prevent the deterioration of contact characteristics between connection pads.
- The photodetector includes at least two semiconductor layers and wiring layers on each side in a stacking direction, with insulating films and connection pads in each wiring layer.
- The connection pads are bonded together to ensure electrical coupling between the layers.
- One of the semiconductor layers contains a photoelectric conversion region on the light incident surface side.
- The insulating film consists of a first insulating film and a second insulating film with higher rigidity that penetrates the first insulating film.
- The second insulating film is positioned between the connection pad and at least one of the semiconductor layers.
Potential Applications: - Optical communication systems - Image sensors - Photovoltaic devices
Problems Solved: - Preventing deterioration of contact characteristics between connection pads - Ensuring reliable electrical coupling in the photodetector
Benefits: - Improved performance and longevity of photodetectors - Enhanced reliability in optical systems
Commercial Applications: Title: Enhanced Photodetectors for Optical Communication Systems This technology can be utilized in the development of advanced optical communication systems, image sensors, and photovoltaic devices, enhancing their performance and reliability in various commercial applications.
Questions about the technology: 1. How does the use of the second insulating film with higher rigidity improve the reliability of the photodetector? 2. What are the specific advantages of having a photoelectric conversion region in one of the semiconductor layers?
Original Abstract Submitted
Provided is a photodetector in which the deterioration of contact characteristics between connection pads is prevented. The photodetector includes at least two semiconductor layers, and a wiring layer on one side in a stacking direction and a wiring layer on another side in the stacking direction, the wiring layers being interposed between the semiconductor layers, each including an insulating film and a connection pad provided in the insulating film, and being electrically coupled to each other with surfaces of the connection pads bonded together, in which the at least two semiconductor layers include a semiconductor layer with a photoelectric conversion region on a light incident surface side, the insulating film includes a first insulating film and a second insulating film that includes a material with a higher rigidity than a material of the first insulating film and penetrates the first insulating film in the stacking direction, and the second insulating film is provided between the connection pad and at least one of the semiconductor layers.
