18685326. IMAGING ELEMENT AND IMAGING DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

IMAGING ELEMENT AND IMAGING DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

KAZUNORI Kurishima of KANAGAWA (JP)

MASAKAZU Muroyama of KANAGAWA (JP)

IMAGING ELEMENT AND IMAGING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18685326 titled 'IMAGING ELEMENT AND IMAGING DEVICE

The imaging element described in the patent application consists of a first electrode, a second electrode, a third electrode, a photoelectric conversion layer, and a semiconductor layer.

• The first electrode and second electrode are parallel to each other, while the third electrode is positioned opposite to them.
• The photoelectric conversion layer, made of organic material, is sandwiched between the first electrode, second electrode, and the third electrode.
• The semiconductor layer comprises a first layer and a second layer stacked between the first electrode, second electrode, and the photoelectric conversion layer.
• The first layer contains a specific oxide material with defined carrier concentration and bond dissociation energy, while the second layer includes the same oxide material along with another oxide material with specific properties.

Potential Applications: - This technology can be used in digital cameras, medical imaging devices, and other imaging systems. - It could also find applications in solar panels and other photovoltaic devices.

Problems Solved: - Enhances the efficiency and performance of imaging sensors. - Improves the quality of images captured by devices utilizing this technology.

Benefits: - Higher sensitivity and resolution in imaging applications. - Lower power consumption and improved signal-to-noise ratio.

Commercial Applications: Title: Advanced Imaging Sensor Technology for Enhanced Performance This technology can be commercialized in the consumer electronics industry for smartphones, tablets, and digital cameras. It can also be utilized in the medical field for diagnostic imaging equipment.

Questions about the technology: 1. How does the specific oxide material in the semiconductor layer contribute to the performance of the imaging element? 2. What sets this imaging element apart from existing technologies in the market?

Original Abstract Submitted

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed in parallel; a third electrode that is disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer that is provided between the first electrode and second electrode, and the third electrode, and includes an organic material; and a semiconductor layer including a first layer and a second layer that are stacked in order from side of the first electrode and the second electrode between the first electrode and second electrode, and the photoelectric conversion layer. The first layer includes a first oxide material having a carrier concentration of 1E19 cmor more and 1E21 cmor less and bond dissociation energy of 3.58 eV or more and 5.50 eV or less, and the second layer includes the first oxide material and a second oxide material having a band gap of 4.5 eV or more and bond dissociation energy of 4.0 eV or more and 8.8 eV or less.