18747379. SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

YING-CHIH Chen of HSINCHU (TW)

BLANKA Magyari-kope of HSINCHU (TW)

SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18747379 titled 'SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE

The abstract of the patent application describes a device with a gate stack and a channel layer over the gate stack. The gate stack consists of a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness ranging from approximately 1 μm to 30 μm.

• Simplified Explanation:

- Device with gate stack and channel layer. - Gate stack includes metal gate electrode, ferroelectric layer, and semiconducting oxide layer. - Semiconducting oxide layer thickness between 1 μm and 30 μm.

• Key Features and Innovation:

- Integration of ferroelectric layer in gate stack. - Semiconducting oxide layer with specific thickness range. - Potential for improved device performance.

• Potential Applications:

- Advanced semiconductor devices. - Memory storage applications. - High-performance electronics.

• Problems Solved:

- Enhancing device efficiency. - Improving data retention. - Increasing device reliability.

• Benefits:

- Enhanced performance. - Increased data storage capacity. - Improved device longevity.

• Commercial Applications:

- Semiconductor industry. - Electronics manufacturing. - Memory storage technology market.

• Questions about the Technology:

1. How does the integration of a ferroelectric layer impact device performance? 2. What are the advantages of using a semiconducting oxide layer with a specific thickness range?

• Frequently Updated Research:

- Ongoing studies on optimizing ferroelectric layer properties. - Research on scaling semiconducting oxide layer thickness for different applications.

Original Abstract Submitted

A device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness between approximately 1 μm and approximately 30 μm.