18294859. POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD simplified abstract (Resonac Corporation)
Contents
POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD
Organization Name
Inventor(s)
Noriaki Murakami of Tokyo (JP)
POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18294859 titled 'POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD
The abstract describes a polishing liquid for CMP (Chemical Mechanical Polishing) containing abrasive grains, an additive, and water. The abrasive grains consist of cerium-based particles, and the additive includes a 4-pyrone-based compound and a saturated monocarboxylic acid, with a pH above 4.0. Another version of the polishing liquid contains picolinic acid as part of the additive.
- The polishing liquid for CMP includes cerium-based particles as abrasive grains.
- The additive in the polishing liquid consists of a 4-pyrone-based compound and a saturated monocarboxylic acid.
- The pH of the polishing liquid is maintained above 4.0.
- Another version of the polishing liquid includes picolinic acid in the additive.
- Both versions of the polishing liquid are designed for Chemical Mechanical Polishing processes.
Potential Applications: - Semiconductor manufacturing - Optical lens polishing - Metal polishing applications
Problems Solved: - Improving polishing efficiency - Enhancing surface smoothness - Minimizing defects during polishing processes
Benefits: - Increased polishing precision - Reduced surface damage - Enhanced overall product quality
Commercial Applications: Title: Advanced Polishing Liquid for Semiconductor Manufacturing This technology can be used in the semiconductor industry for the precise polishing of wafers, leading to improved chip performance and yield. The market implications include increased demand for high-quality polishing solutions in the semiconductor manufacturing sector.
Questions about Polishing Liquid for CMP: 1. How does the addition of cerium-based particles enhance the polishing process? 2. What are the specific advantages of using a 4-pyrone-based compound in the additive formulation?
Original Abstract Submitted
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below and (B) a saturated monocarboxylic acid, and a pH is more than 4.0. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A2) picolinic acid and (B) a saturated monocarboxylic acid, and a pH is more than 4.0.
