18218920. NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (International Business Machines Corporation)

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

Organization Name

International Business Machines Corporation

Inventor(s)

Jaewoo Jeong of San Jose CA (US)

Tiar Ikhtiar of San Jose CA (US)

Panagiotis Charilaos Filippou of Fremont CA (US)

Chirag Garg of San Jose CA (US)

See-Hun Yang of Morgan Hill CA (US)

Mahesh Govind Samant of San Jose CA (US)

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18218920 titled 'NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

The patent application describes a magnetic memory device with a unique structure to enhance performance.

• The device includes a substrate, a thermally stable nitride seed layer oriented in a (001) direction, a chemical templating layer, and a magnetic layer.
• The chemical templating layer contains a binary alloy with a CsCl prototype structure.
• The magnetic layer consists of a Heusler compound with perpendicular magnetic anisotropy (PMA).

Potential Applications:

• This technology can be used in data storage devices such as hard drives and solid-state drives.
• It may also find applications in magnetic sensors and other magnetic memory systems.

Problems Solved:

• The device addresses the need for improved magnetic memory performance and stability.
• It offers a solution for enhancing data storage capacity and speed.

Benefits:

• Increased data storage density and efficiency.
• Enhanced magnetic memory device performance and reliability.

Commercial Applications:

• This technology could revolutionize the data storage industry by providing more advanced and reliable magnetic memory solutions.

Questions about Magnetic Memory Devices: 1. How does the CsCl prototype structure in the chemical templating layer contribute to the device's performance? 2. What advantages does perpendicular magnetic anisotropy (PMA) offer in magnetic memory devices?

Original Abstract Submitted

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).