18298402. METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract (International Business Machines Corporation)

METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

Organization Name

International Business Machines Corporation

Inventor(s)

Sagarika Mukesh of ALBANY NY (US)

Shravana Kumar Katakam of Lehi UT (US)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Julien Frougier of Albany NY (US)

METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 18298402 titled 'METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

Simplified Explanation: The patent application describes a semiconductor structure with an array of transistors connected by a metal connection that spans from the frontside to the backside of the array.

• The structure includes an array of transistors on a semiconductor substrate.
• The array consists of a first transistor and a second transistor positioned next to each other.
• A metal connection links the first transistor to the second transistor, connecting a first metal contact on the frontside to a second metal contact on the backside.

Key Features and Innovation:

• Array of transistors on a semiconductor substrate.
• Metal connection linking transistors from frontside to backside.
• Efficient design for interconnecting transistors in a semiconductor structure.

Potential Applications: This technology could be used in:

• Integrated circuits
• Microprocessors
• Memory devices

Problems Solved:

• Efficient interconnection of transistors in a semiconductor structure.
• Improved performance and reliability of electronic devices.

Benefits:

• Enhanced functionality of semiconductor devices.
• Increased efficiency in data processing.
• Improved overall performance of electronic systems.

Commercial Applications: This technology has potential applications in the semiconductor industry for:

• Manufacturing of advanced electronic devices.
• Development of high-performance computing systems.

Prior Art: Readers can explore prior art related to semiconductor structures, metal connections in transistors, and interconnection technologies in the semiconductor industry.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology, metal interconnects, and transistor design for cutting-edge electronic devices.

Questions about Semiconductor Structure: 1. How does the metal connection improve the performance of the array of transistors? 2. What are the potential challenges in implementing this semiconductor structure in practical electronic devices?

Original Abstract Submitted

Embodiments of present invention provide a semiconductor structure. The structure includes an array of transistors on a semiconductor substrate, the array of transistors including a first transistor and a second transistor, the second transistor being next to the first transistor; and a metal connection between the first transistor and the second transistor, wherein the metal connection connects a first metal contact at a frontside of the array of transistors to a second metal contact at a backside of the array of transistors. A method of forming the same is also provided.