18585576. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

FUJI ELECTRIC CO., LTD.

Inventor(s)

Noriaki Noji of Nagano-city (JP)

Naoko Kodama of Matsumoto-city (JP)

Kazuhiro Kitahara of Matsumoto-city (JP)

Tatsuya Hashimoto of Azumino-city (JP)

Ryota Kataoka of Matsumoto-city (JP)

Shunya Hayashida of Matsumoto-city (JP)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18585576 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The method described in the patent application involves manufacturing a semiconductor device by forming a surface structure with a MOS structure in a semiconductor substrate, partially covering it with an interlayer insulating film, and then covering the entire area with an aluminum alloy film.

• The aluminum alloy film is then covered with a resist film, which is patterned to expose a convex-shaped defect in the aluminum alloy film.
• The patterned aluminum alloy film is then etched using the resist film as a mask, and the resist film is subsequently removed.

This process allows for the precise patterning of the aluminum alloy film to create the desired structure on the semiconductor device.

1. 1. 1. Potential Applications:

This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

1. 1. 1. Problems Solved:

This method addresses the need for precise patterning of aluminum alloy films in semiconductor devices, ensuring the proper functioning and performance of the devices.

1. 1. 1. Benefits:

- Improved accuracy in patterning aluminum alloy films - Enhanced performance and reliability of semiconductor devices - Cost-effective manufacturing process

1. 1. 1. Commercial Applications:

The technology can be utilized by semiconductor manufacturers to produce high-quality and reliable semiconductor devices for a wide range of applications in electronics and technology industries.

1. 1. 1. Questions about Semiconductor Device Manufacturing:

1. How does the method of patterning aluminum alloy films improve the performance of semiconductor devices? 2. What are the key advantages of using an interlayer insulating film in the manufacturing process?

1. 1. 1. Frequently Updated Research:

Ongoing research in semiconductor device manufacturing focuses on enhancing the efficiency and scalability of the process, as well as developing new materials and techniques for improved device performance.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating film partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film covering the surface of the aluminum alloy film so as to have a thickness partially exposing a convex-shaped defect of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.