18749528. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Motoyoshi Kubouchi of Matsumoto-city (JP)
Makoto Shimosawa of Matsumoto-city (JP)
Takashi Yoshimura of Matsumoto-city (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18749528 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The method described in the patent application involves manufacturing a semiconductor device through several steps, including forming various layers and structures on the semiconductor substrate.
- Forming an interlayer dielectric film with a contact hole above the semiconductor substrate.
- Depositing an initial metal film containing a predetermined first metal on the upper surface of the semiconductor substrate and on the side walls of the interlayer dielectric film.
- Forming a first alloy layer containing the first metal on the upper surface of the semiconductor substrate.
- Creating a first barrier metal portion containing the first metal on the side walls of the interlayer dielectric film.
- Etching either the initial metal film or the first barrier metal portion.
- Depositing an oxide layer on the first alloy layer and etching it.
- Forming a conductive second barrier metal portion above the first alloy layer.
- Forming a plug layer above the second barrier metal portion.
Potential Applications: - This method can be used in the manufacturing of various semiconductor devices, such as integrated circuits and microprocessors. - It can also be applied in the production of memory chips and other electronic components.
Problems Solved: - Provides a method for creating precise and reliable connections within semiconductor devices. - Helps improve the overall performance and efficiency of semiconductor components.
Benefits: - Enhances the functionality and durability of semiconductor devices. - Enables the production of more advanced and complex electronic systems.
Commercial Applications: - This technology can be valuable for semiconductor manufacturers looking to enhance the quality and performance of their products. - It can also benefit companies involved in the production of consumer electronics and industrial equipment.
Questions about the technology: 1. How does this method compare to traditional techniques for manufacturing semiconductor devices? 2. What specific advantages does the use of alloy layers and barrier metal portions offer in this process?
Original Abstract Submitted
Provided is a method for manufacturing a semiconductor device, the method including: forming an interlayer dielectric film having a contact hole above the semiconductor substrate; forming an initial metal film containing a predetermined first metal on an upper surface of the semiconductor substrate and on side walls of the interlayer dielectric film; forming a first alloy layer containing the first metal on the upper surface of the semiconductor substrate; forming a first barrier metal portion containing the first metal on the side walls of the interlayer dielectric film; etching at least one of the initial metal film or the first barrier metal portion; forming an oxide layer on an upper surface of the first alloy layer; etching the oxide layer; forming a second barrier metal portion, which is conductive, above the first alloy layer; and forming a plug layer above the second barrier metal portion.
