18587742. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Atsushi Yoshimoto of Matsumoto-city (JP)
Hidenori Satou of Matsumoto-city (JP)
Takahito Kojima of Matsumoto-city (JP)
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18587742 titled 'METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
The method of manufacturing a silicon carbide semiconductor device involves preparing a silicon carbide semiconductor substrate with a first semiconductor layer of a first conductivity type on a starting substrate of the same type. Ion implantation of first semiconductor regions of a second conductivity type is done in the first semiconductor layer. An oxide film thicker at the C-face than at the Si-face is formed to treat warpage of the substrate. Further steps include ion implantation of a second semiconductor layer of the second conductivity type and a third semiconductor layer of the first conductivity type, activation of the semiconductor regions and layers, and forming trenches reaching the first semiconductor layer at positions facing the first semiconductor regions.
- Preparation of silicon carbide semiconductor substrate with specific conductivity layers
- Ion implantation of semiconductor regions of different conductivity types
- Formation of oxide film to treat substrate warpage
- Ion implantation of additional semiconductor layers
- Activation of semiconductor regions and layers
- Formation of trenches reaching specific layers in the substrate
Potential Applications: - Power electronics - High-temperature applications - Solar inverters
Problems Solved: - Warpage of silicon carbide semiconductor substrates - Efficient doping of semiconductor regions - Enhanced conductivity in specific layers
Benefits: - Improved device performance - Enhanced reliability - Increased efficiency in power applications
Commercial Applications: Title: Advanced Silicon Carbide Semiconductor Device Manufacturing This technology can be used in the production of high-performance power electronics for various industries, including automotive, aerospace, and renewable energy sectors. The market implications include improved efficiency, reliability, and durability of semiconductor devices.
Questions about Silicon Carbide Semiconductor Device Manufacturing: 1. How does the formation of the oxide film help in treating the warpage of the silicon carbide semiconductor substrate? 2. What are the specific benefits of ion implantation of different semiconductor layers in the manufacturing process?
Original Abstract Submitted
A method of manufacturing a silicon carbide semiconductor device, includes preparing a silicon carbide semiconductor substrate in which a first semiconductor layer of a first conductivity type is provided on a starting substrate of the first conductivity type; ion-implanting first semiconductor regions of a second conductivity type in the first semiconductor layer; thereafter, forming, at a C-face, an oxide film thicker than that at a Si-face as a treatment of reversing warpage of the silicon carbide semiconductor substrate. The method further includes ion-implanting a second semiconductor layer of the second conductivity type in the first semiconductor layer and a third semiconductor layer of the first conductivity type in a surface layer of the second semiconductor layer; activating the first semiconductor regions and the second and third semiconductor layers; and forming trenches reaching the first semiconductor layer at positions facing the first semiconductor regions in a depth direction.
