18746055. INTERCONNECTION STRUCTURE simplified abstract (United Microelectronics Corp.)
Contents
INTERCONNECTION STRUCTURE
Organization Name
Inventor(s)
Min-Shiang Hsu of Kaohsiung City (TW)
Yu-Han Tsai of Kaohsiung City (TW)
Chih-Sheng Chang of Tainan City (TW)
INTERCONNECTION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746055 titled 'INTERCONNECTION STRUCTURE
The interconnection structure described in the patent application includes multiple levels of interconnections and a super via structure. The second interconnection level is situated on top of the first interconnection level, with the third interconnection level on top of the second interconnection level. The second interconnection level consists of a conductive layer and a block layer within a dielectric layer. The block layer is positioned between the first conductive layer of the first interconnection level and the third conductive layer of the third interconnection level, with the super via structure penetrating through the block layer to electrically connect the first and third conductive layers.
- The interconnection structure comprises multiple levels of interconnections and a super via structure.
- The second interconnection level is located above the first interconnection level, with the third interconnection level above the second.
- The second interconnection level includes a conductive layer and a block layer within a dielectric layer.
- The block layer is positioned between the first and third conductive layers in a vertical direction.
- The super via structure penetrates through the block layer to connect the first and third conductive layers.
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Improved interconnection efficiency - Enhanced signal transmission - Increased circuit density
Benefits: - Higher performance - Enhanced reliability - Cost-effective manufacturing
Commercial Applications: Title: Advanced Interconnection Structures for Semiconductor Devices This technology can be utilized in the production of high-performance semiconductor devices, leading to improved efficiency and reliability in various electronic applications. The market implications include increased demand for advanced interconnection solutions in the semiconductor industry.
Prior Art: Readers can explore prior art related to interconnection structures in semiconductor devices by researching IPC codes such as H01L and CPC codes like H01L24.
Frequently Updated Research: Stay updated on the latest advancements in interconnection technologies for semiconductor devices to ensure optimal performance and reliability.
Original Abstract Submitted
An interconnection structure includes a first interconnection level, a second interconnection level, a third interconnection level, and a super via structure. The second interconnection level is disposed on the first interconnection level, and the third interconnection level is disposed on the second interconnection level. The second interconnection level includes a second conductive layer and a block layer disposed in a dielectric layer. A bottom surface of the block layer is lower than a top surface of the second conductive layer in a vertical direction. The block layer is disposed between a first conductive layer of the first interconnection level and a third conductive layer of the third interconnection level in the vertical direction. The super via structure penetrates through the block layer and the second interconnection level in the vertical direction and electrically connects the first conductive layer and the third conductive layer.
