18603426. ELECTROSTATIC DISCHARGE PROTECTION DEVICE simplified abstract (MEDIATEK INC.)
Contents
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
Organization Name
Inventor(s)
Tzung-Lin Li of Hsinchu City (TW)
Yuan-Fu Chung of Hsinchu City (TW)
Tung-Hsing Lee of Hsinchu City (TW)
ELECTROSTATIC DISCHARGE PROTECTION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18603426 titled 'ELECTROSTATIC DISCHARGE PROTECTION DEVICE
The abstract describes an electrostatic discharge protection device comprising various semiconductor regions to prevent damage from electrostatic discharge events.
- P-type and N-type well regions are embedded in a P-type semiconductor substrate.
- A deep N-type well region is located below the P-type well region in the substrate.
- First N-type and P-type doped regions are situated on the P-type well region.
- Second N-type and P-type doped regions are positioned on the N-type well region.
- The first P-type doped region is electrically connected to the second N-type doped region.
Potential Applications: - Electronic devices requiring protection from electrostatic discharge events. - Integrated circuits in sensitive electronic equipment.
Problems Solved: - Preventing damage to electronic components from electrostatic discharge. - Ensuring the reliability and longevity of electronic devices.
Benefits: - Enhanced protection against electrostatic discharge events. - Increased durability and reliability of electronic devices.
Commercial Applications: Title: "Advanced Electrostatic Discharge Protection for Electronic Devices" This technology can be utilized in the manufacturing of various electronic devices such as smartphones, laptops, and other consumer electronics to ensure their longevity and reliability in the face of electrostatic discharge events.
Questions about the technology: 1. How does the electrostatic discharge protection device differ from traditional protection methods?
- The device offers more comprehensive protection by utilizing multiple semiconductor regions to dissipate electrostatic discharge energy effectively.
2. What are the key advantages of using this specific configuration of semiconductor regions for electrostatic discharge protection?
- This configuration allows for efficient dissipation of electrostatic discharge energy while maintaining the integrity of the electronic components.
Original Abstract Submitted
An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a P-type semiconductor substrate, P-type and N-type well regions, a deep N-type well region, first N-type and P-type doped regions, second N-type and P-type doped regions. The P-type and N-type well regions are located in the P-type semiconductor substrate. The deep N-type well region is located in the P-type semiconductor substrate and below the P-type well region. The first N-type and P-type doped regions are located on the P-type well region. The second N-type and P-type doped regions are located on the N-type well region. The first P-type doped region is electrically connected to the second N-type doped region.
