18746337. SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME
Organization Name
Inventor(s)
TSE-YAO Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746337 titled 'SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME
Simplified Explanation: The semiconductor device described in the patent application consists of layers forming an I-shaped structure with an air gap surrounded by an isolation layer.
- The semiconductor device includes a bottom barrier layer, a conductive contact, and a top barrier layer forming an I-shaped structure.
- An isolation layer is placed adjacent to the I-shaped structure and extends into the semiconductor substrate.
- The structure encloses an air gap, which is surrounded by the isolation layer.
Key Features and Innovation:
- I-shaped structure design for the semiconductor device.
- Incorporation of an air gap surrounded by an isolation layer.
- Enhanced performance and functionality of the semiconductor device.
Potential Applications:
- Semiconductor manufacturing industry.
- Electronics and technology sector.
- Research and development in semiconductor devices.
Problems Solved:
- Improved isolation and protection of the semiconductor components.
- Enhanced performance and reliability of the semiconductor device.
- Efficient heat dissipation and electrical conductivity.
Benefits:
- Increased durability and longevity of the semiconductor device.
- Enhanced functionality and performance.
- Improved thermal management and electrical conductivity.
Commercial Applications: Potential commercial applications include:
- Integrated circuits.
- Microprocessors.
- Power electronics.
Prior Art: Readers can explore prior art related to semiconductor device structures, air gaps in semiconductor devices, and isolation layers in semiconductor technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, materials science, and nanotechnology for potential insights into future developments.
Questions about Semiconductor Device Structures: 1. What are the key components of the semiconductor device structure described in the patent application? 2. How does the incorporation of an air gap surrounded by an isolation layer benefit the performance of the semiconductor device?
Original Abstract Submitted
A semiconductor device includes a bottom barrier layer disposed over a semiconductor substrate, and a conductive contact disposed over the bottom barrier layer. The semiconductor device also includes a top barrier layer disposed over the conductive contact. The bottom barrier layer, the conductive contact, and the top barrier layer form an I-shaped structure. The semiconductor device further includes an isolation layer disposed adjacent to the I-shaped structure and extending into the semiconductor substrate. An air gap is surrounded by the isolation layer.
